Abstract: Provided is an in-situ precleaning method for use in conjunction with epitaxial processes that utilizes temperatures at or below those typically utilized during the subsequent epitaxial deposition under pressure and ambient conditions suitable for inducing decomposition of semiconductor oxides, such as native oxides, from exposed semiconductor surfaces. The reduced temperature and the resulting quality of the cleaned semiconductor surfaces will tend to reduce the likelihood of temperature related issues such as unwanted diffusion, autodoping, slip, and other crystalline stress problems while simultaneously reducing the overall process time. The combination of pressure, ambient gas composition and temperature maintained within the reaction chamber are sufficient to decompose semiconductor oxides present on the substrate surface.