Abstract: A writing implement comprises first to n-th members (n is a natural number), an inner tube and a device of mechanism for projecting or retracting a writing tip connected to the first member, and the first to n-th members are stacked around the inner tube. Each of the first to n-th members is able to transmit rotational motion to the adjacent member. With such a structure, design quality can be improved. Also, it can provide a writing implement which attracts people even when they are not writing.

Abstract: A writing implement comprises first to n-th members (n is a natural number), an inner tube and a device of mechanism for projecting or retracting a writing tip connected to the first member, and the first to n-th members are stacked around the inner tube. Each of the first to n-th members is able to transmit rotational motion to the adjacent member. With such a structure, design quality can be improved. Also, it can provide a writing implement which attracts people even when they are not writing.

Abstract: A cable managing device for a case is disclosed. The cable managing device includes at least one straight cable manager including a straight base whose sides respectively upward extend to form two first sidewalls and a first accommodation space. At least one curved cable manager includes a curved base whose outer side upward extends to form a second sidewall and a second accommodation space inside the second sidewall. The bottoms of two ends of the curved base are respectively provided with a second male tenon and a second female tenon. One of the tenons is fastened with one of a female tenon and a male tenon at two ends of the straight cable manager to connect the first accommodation space with the second accommodation space, thereby accommodating the cables.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD) layer is formed on a semiconductor substrate, a patterned hard mask layer is formed on the IMD layer, and a first aperture is formed in the IMD layer. A first barrier layer is formed on the patterned hard mask layer and a surface of the first aperture, a first patterned resist is formed on the first barrier layer, and an etching process is performed to form a second aperture in the IMD layer by using the first patterned resist as a mask. The first patterned resist is kept from being poisoned because of the first barrier layer, and the critical dimension control of the semiconductor structure may be improved accordingly.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: An attachable cup includes a container and an attachable device for a toothbrush, and the attachable device includes at least one part of the container. An attachable device is for attaching a container to a toothbrush. The attachable device uses a fastening method, a gripping method, a clamping method, a locking method or the like to attach the attachable cup to a toothbrush. Once the attachable device attaches the attachable cup to a toothbrush, the operator can use the attachable cup for oral rinsing.

Abstract: An attachable cup includes a container and an attachable device for a toothbrush, and the attachable device includes at least one part of the container. An attachable device is for attaching a container to a toothbrush. The attachable device uses a fastening method, a gripping method, a clamping method, a locking method or the like to attach the attachable cup to a toothbrush. Once the attachable device attaches the attachable cup to a toothbrush, the operator can use the attachable cup for oral rinsing.

Abstract: The pair of eyeglasses includes at least a lens, at least a frame, at least a pair of catching elements and at least a pair of temples. The lens is provided with at least a pair of extension portions respectively disposed in the left and right opposite ends, and each extension portion is provided with at least a pair of fixing pillars. The frame is provided with at least an upper groove in the upper elongated rim, at least a lower groove in the nose portion and at least a pair of inlaid blocks respectively disposed on the left and right opposite ends. One end of each catching element is coupled to each extension portion of the lens for each pair of fixing pillars in each extension portion to be caught in, and an opposite end is connected with one end of each temple, so as for the assembly of the lens, frame and temples to be completed in a simpler and fast way.