Patents by Inventor Shin Feng

Shin Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10331236
    Abstract: A writing implement comprises first to n-th members (n is a natural number), an inner tube and a device of mechanism for projecting or retracting a writing tip connected to the first member, and the first to n-th members are stacked around the inner tube. Each of the first to n-th members is able to transmit rotational motion to the adjacent member. With such a structure, design quality can be improved. Also, it can provide a writing implement which attracts people even when they are not writing.
    Type: Grant
    Filed: December 24, 2016
    Date of Patent: June 25, 2019
    Inventor: Shin Feng
  • Publication number: 20180178581
    Abstract: A writing implement comprises first to n-th members (n is a natural number), an inner tube and a device of mechanism for projecting or retracting a writing tip connected to the first member, and the first to n-th members are stacked around the inner tube. Each of the first to n-th members is able to transmit rotational motion to the adjacent member. With such a structure, design quality can be improved. Also, it can provide a writing implement which attracts people even when they are not writing.
    Type: Application
    Filed: December 24, 2016
    Publication date: June 28, 2018
    Inventor: Shin Feng
  • Patent number: 9949393
    Abstract: A cable managing device for a case is disclosed. The cable managing device includes at least one straight cable manager including a straight base whose sides respectively upward extend to form two first sidewalls and a first accommodation space. At least one curved cable manager includes a curved base whose outer side upward extends to form a second sidewall and a second accommodation space inside the second sidewall. The bottoms of two ends of the curved base are respectively provided with a second male tenon and a second female tenon. One of the tenons is fastened with one of a female tenon and a male tenon at two ends of the straight cable manager to connect the first accommodation space with the second accommodation space, thereby accommodating the cables.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: April 17, 2018
    Assignee: NZXT INC.
    Inventor: Shin Feng
  • Patent number: 9711358
    Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: July 18, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Te Chen, En-Chiuan Liou, Chia-Hsun Tseng, Shin-Feng Su, Yu-Ting Hung, Meng-Lin Tsai
  • Patent number: 9653345
    Abstract: A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD) layer is formed on a semiconductor substrate, a patterned hard mask layer is formed on the IMD layer, and a first aperture is formed in the IMD layer. A first barrier layer is formed on the patterned hard mask layer and a surface of the first aperture, a first patterned resist is formed on the first barrier layer, and an etching process is performed to form a second aperture in the IMD layer by using the first patterned resist as a mask. The first patterned resist is kept from being poisoned because of the first barrier layer, and the critical dimension control of the semiconductor structure may be improved accordingly.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: May 16, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shang-Nan Chou, Che-Yi Lin, En-Chiuan Liou, Yu-Ting Hung, Shin-Feng Su, Chia-Hsun Tseng
  • Publication number: 20170117149
    Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
    Type: Application
    Filed: January 5, 2017
    Publication date: April 27, 2017
    Inventors: Yu-Te Chen, En-Chiuan Liou, Chia-Hsun Tseng, Shin-Feng Su, Yu-Ting Hung, Meng-Lin Tsai
  • Patent number: 9583343
    Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: February 28, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Te Chen, En-Chiuan Liou, Chia-Hsun Tseng, Shin-Feng Su, Yu-Ting Hung, Meng-Lin Tsai
  • Publication number: 20170025286
    Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.
    Type: Application
    Filed: July 26, 2015
    Publication date: January 26, 2017
    Inventors: Yu-Te Chen, Chia-Hsun Tseng, En-Chiuan Liou, Chiung-Lin Hsu, Meng-Lin Tsai, Jan-Fu Yang, Yu-Ting Hung, Shin-Feng Su
  • Patent number: 9548216
    Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.
    Type: Grant
    Filed: July 26, 2015
    Date of Patent: January 17, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Te Chen, Chia-Hsun Tseng, En-Chiuan Liou, Chiung-Lin Hsu, Meng-Lin Tsai, Jan-Fu Yang, Yu-Ting Hung, Shin-Feng Su
  • Publication number: 20160343567
    Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
    Type: Application
    Filed: June 29, 2015
    Publication date: November 24, 2016
    Inventors: Yu-Te Chen, En-Chiuan Liou, Chia-Hsun Tseng, Shin-Feng Su, Yu-Ting Hung, Meng-Lin Tsai
  • Patent number: 9241561
    Abstract: An attachable cup includes a container and an attachable device for a toothbrush, and the attachable device includes at least one part of the container. An attachable device is for attaching a container to a toothbrush. The attachable device uses a fastening method, a gripping method, a clamping method, a locking method or the like to attach the attachable cup to a toothbrush. Once the attachable device attaches the attachable cup to a toothbrush, the operator can use the attachable cup for oral rinsing.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: January 26, 2016
    Inventor: Shin Feng
  • Publication number: 20150013096
    Abstract: An attachable cup includes a container and an attachable device for a toothbrush, and the attachable device includes at least one part of the container. An attachable device is for attaching a container to a toothbrush. The attachable device uses a fastening method, a gripping method, a clamping method, a locking method or the like to attach the attachable cup to a toothbrush. Once the attachable device attaches the attachable cup to a toothbrush, the operator can use the attachable cup for oral rinsing.
    Type: Application
    Filed: July 8, 2013
    Publication date: January 15, 2015
    Inventor: Shin Feng
  • Patent number: 8303111
    Abstract: The pair of eyeglasses includes at least a lens, at least a frame, at least a pair of catching elements and at least a pair of temples. The lens is provided with at least a pair of extension portions respectively disposed in the left and right opposite ends, and each extension portion is provided with at least a pair of fixing pillars. The frame is provided with at least an upper groove in the upper elongated rim, at least a lower groove in the nose portion and at least a pair of inlaid blocks respectively disposed on the left and right opposite ends. One end of each catching element is coupled to each extension portion of the lens for each pair of fixing pillars in each extension portion to be caught in, and an opposite end is connected with one end of each temple, so as for the assembly of the lens, frame and temples to be completed in a simpler and fast way.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: November 6, 2012
    Assignee: High Rainbow Ent. Co., Ltd.
    Inventor: Shin-Feng Lin
  • Pen
    Patent number: D812139
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: March 6, 2018
    Inventor: Shin Feng
  • Patent number: D826032
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 21, 2018
    Assignee: NZXT Inc.
    Inventor: Shin Feng
  • Patent number: D826033
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 21, 2018
    Assignee: NZXT Inc.
    Inventor: Shin Feng
  • Patent number: D826034
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 21, 2018
    Assignee: NZXT Inc.
    Inventor: Shin Feng
  • Patent number: D826700
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 28, 2018
    Assignee: NZXT Inc.
    Inventor: Shin Feng
  • Patent number: D834646
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: November 27, 2018
    Inventor: Shin Feng
  • Patent number: D976321
    Type: Grant
    Filed: January 31, 2021
    Date of Patent: January 24, 2023
    Inventor: Shin Feng