Patents by Inventor Shin Harada

Shin Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11242618
    Abstract: A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm?2, a threading screw dislocation density of not more than 1×104 cm?2, a threading edge dislocation density of not more than 1×104 cm?2, a basal plane dislocation density of not more than 1×104 cm?2, a stacking fault density of not more than 0.1 cm?1, a conductive impurity concentration of not less than 1×1018 cm?3, a residual impurity concentration of not more than 1×1016 cm?3, and a secondary phase inclusion density of not more than 1 cm?3.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: February 8, 2022
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Shinsuke Fujiwara, Taro Nishiguchi
  • Patent number: 11066756
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: July 20, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Harada, Tsutomu Hori, Sho Sasaki, Tetsuya Kishida
  • Patent number: 10741683
    Abstract: A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: August 11, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Makoto Sasaki, Taro Nishiguchi, Kyoko Okita, Keiji Wada, Tomihito Miyazaki
  • Patent number: 10724151
    Abstract: A device of manufacturing a silicon carbide single crystal includes a crucible, a first resistive heater, a second resistive heater, and a first support portion. The crucible has a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface. The first resistive heater is disposed to face the bottom surface. The second resistive heater is provided to surround the side surface. The first support portion supports the crucible such that the bottom surface is separated from the first resistive heater, and the side surface is separated from the second resistive heater. The first support portion is in contact with at least one of the top surface and the side surface.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: July 28, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tsutomu Hori, Shin Harada
  • Publication number: 20200063286
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Application
    Filed: October 29, 2019
    Publication date: February 27, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shin HARADA, Tsutomu HORI, Sho SASAKI, Tetsuya KISHIDA
  • Patent number: 10513799
    Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: December 24, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Sho Sasaki, Shin Harada, Tsutomu Hori
  • Patent number: 10494735
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: December 3, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Tsutomu Hori, Sho Sasaki, Tetsuya Kishida
  • Patent number: 10361273
    Abstract: A silicon carbide substrate whose majority carrier density is 1×1017 cm?3 or greater is such that a standard deviation of minority carrier lifetime as obtained by ?-PCD analysis is 0.7 ns or less in an area other than an area within a distance of 5 mm from an outer perimeter of a main surface.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: July 23, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Naoki Kaji, Shunsaku Ueta, Tsutomu Hori, Shin Harada
  • Patent number: 10319821
    Abstract: A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 ?m or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4°. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm?1.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: June 11, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shunsaku Ueta, Kyoko Okita, Shin Harada
  • Publication number: 20190127880
    Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 2, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Sho SASAKI, Shin HARADA, Tsutomu HORI
  • Patent number: 10246797
    Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: April 2, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Sho Sasaki, Shin Harada, Tsutomu Hori
  • Patent number: 10202709
    Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: February 12, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Sho Sasaki, Shin Harada, Tsutomu Hori
  • Publication number: 20180254324
    Abstract: A silicon carbide substrate whose majority carrier density is 1×1017 cm?3 or greater is such that a standard deviation of minority carrier lifetime as obtained by ?-PCD analysis is 0.7 ns or less in an area other than an area within a distance of 5 mm from an outer perimeter of a main surface.
    Type: Application
    Filed: October 12, 2016
    Publication date: September 6, 2018
    Inventors: Naoki KAJI, Shunsaku UETA, Tsutomu HORI, Shin HARADA
  • Publication number: 20180254323
    Abstract: A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 ?m or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4°. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm?1.
    Type: Application
    Filed: July 21, 2016
    Publication date: September 6, 2018
    Inventors: Shunsaku UETA, Kyoko OKITA, Shin HARADA
  • Publication number: 20180204942
    Abstract: A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Inventors: Shin Harada, Makoto Sasaki, Taro Nishiguchi, Kyoko Okita, Keiji Wada, Tomihito Miyazaki
  • Patent number: 9947782
    Abstract: A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: April 17, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Makoto Sasaki, Taro Nishiguchi, Kyoko Okita, Keiji Wada, Tomihito Miyazaki
  • Patent number: 9856583
    Abstract: A method of manufacturing a silicon carbide single crystal includes steps of preparing a crucible, a source material disposed toward a bottom surface in the crucible, a seed crystal disposed to face the source material toward a top surface in the crucible, a resistive heater, and a heat insulator configured to be able to accommodate the crucible therein, measuring a mass of at least a portion of the heat insulator, comparing a measured value of the mass obtained in the measuring step with a threshold value, and growing a silicon carbide single crystal on the seed crystal by sublimation of the source material by heating the crucible placed in the heat insulator with the resistive heater. When the measured value of the mass is lower than the threshold value in the comparing step, the step of growing a silicon carbide single crystal is performed at least one or more times.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: January 2, 2018
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Harada, Tsutomu Hori
  • Patent number: 9845549
    Abstract: A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm2 or less.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: December 19, 2017
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Tsutomu Hori
  • Publication number: 20170335487
    Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
    Type: Application
    Filed: January 5, 2016
    Publication date: November 23, 2017
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Sho SASAKI, Shin HARADA, Tsutomu HORI
  • Publication number: 20170335486
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Application
    Filed: December 17, 2015
    Publication date: November 23, 2017
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shin HARADA, Tsutomu HORI, Sho SASAKI, Tetsuya KISHIDA