Abstract: Etching having high selectivity is performed within a plane of a substrate. To this end, a substrate processing apparatus includes a substrate support where a substrate including a first film containing at least silicon and a second film having a silicon content ratio lower than that of the first film is placed; a process chamber wherein the substrate support is disposed; a gas supply system configured to supply an etching gas to the substrate; a coolant channel disposed in the substrate support and having a coolant flowing therein; a coolant flow rate controller configured to control a flow rate of the coolant supplied to the coolant channel; a control unit configured to control at least the coolant flow rate controller such that a temperature of the substrate is maintained whereat an etch rate of the first film is higher than that of the second film while the etching gas is in contact with the substrate; and an exhaust system configured to exhaust an inner atmosphere of the process chamber.

Abstract: A method for manufacturing a semiconductor device includes: supplying a remover to a substrate including a Si-containing film on which a denatured layer is formed in order to remove the denatured layer; supplying a processing gas containing two or more halogen elements to the substrate in order to remove the Si-containing film; and supplying the remover to the substrate after the act of removing the Si-containing film in order to remove a residue of the denatured layer left after the act of removing the Si-containing film.

Abstract: By obtaining a high-quality film by improving the quality of an oxide film formed at a low temperature, manufacturing costs of a large-scale integrated circuit (LSI) may be decreased. A method of manufacturing a semiconductor device includes (a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber; (b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and (c) supplying a microwave to the substrate after processing the substrate with the process gas.

Abstract: The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.

Abstract: In a plasma ashing processing on a sample including a Low-k film, a processing method that can prevent or reduce a film damage on the Low-k film while performing a high speed ashing processing is provided. A plasma processing method for performing a plasma processing on the sample including a Low-k film 15 includes: a step of performing plasma etching on the sample; and a step of performing plasma ashing on the sample including the Low-k film 15 with a resist mask 13, a carbon hard mask 14, and by-products 16 that have been subjected to plasma etching in the plasma etching process by a carbon (C+) radical 18 and a hydrogen (H+) radical 20 generated from methane (CH4) gas 19, using mixed gas including the methane (CH4) gas 19, which is hydrocarbon gas, and argon (Ar) gas, which is noble gas.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: Provided is a substrate processing method, which can fill an insulating film in a groove having a small width with a high aspect ratio and improve the productivity. The substrate processing method comprises loading a substrate into a processing chamber, supplying silicon compound gas including carbon and hydrogen into the processing chamber, irradiating ultraviolet light on the silicon compound gas supplied into the processing chamber to process the substrate, unloading the processed substrate from the processing chamber, and processing the inside of the processing chamber with excited oxygen-containing gas. Accordingly, an adhered matter generated when irradiating the ultraviolet light on the silicon compound gas to process the substrate and adhered to a structure such as an inner wall of the processing chamber can be processed with the excited oxygen-containing gas to modify it.

Abstract: There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.

Abstract: To provide a method of manufacturing a semiconductor device, which includes a process capable of excellently removing a photoresist in which a high dose of ion is implanted. A photoresist with a high dose of ion implanted therein is removed from a wafer through a first removing process for carrying out a plasma process of at least a reaction gas including oxygen molecules and hydrogen molecules to remove an organic component in the photoresist from the wafer and a second removing process for carrying out a plasma process of at least a reaction gas including hydrogen molecules following the first removing process to remove a dopant deposit from the wafer.

Abstract: It is an object of the present invention to provide a plasma CVD device in which it is possible to inhibit the formation of particles resulting from the adhesion of reaction by-products of poor adhesive strength around the upper electrode.

Abstract: A processing chamber of a plasma CVD device comprises a lower electrode for placing a semiconductor substrate thereon and an upper electrode provided at a position facing the lower electrode and provided with a concave portion on a surface thereof facing a surface of the lower electrode on which the substrate is placed. In deposition process using such a processing chamber, a contaminant removal sequence is provided between a deposition processing step and an exhausting step. During the deposition process, reactive gases SiH4 and NH3 for forming a Si3N4 film are supplied together with an inert gas N2 into the processing chamber. High-frequency electric power is applied between the electrodes to discharge the reactive gases so as to form the Si3N4 film on the semiconductor substrate.