Abstract: A display apparatus is disclosed that includes a thin-film transistor including a semiconductor layer, an organic light-emitting element, and a passivation layer including a first contact hole connecting the thin-film transistor and the organic light-emitting element, wherein the passivation layer includes a first passivation layer, a second passivation layer, and a third passivation layer, which are sequentially stacked, and the first passivation layer includes SiON.

Abstract: Provided is a display device including a substrate including a display area and a contact area located in a display area, a power line disposed in a display area on a substrate and overlapping a contact area, a passivation layer disposed on a substrate and a power line, and an opening exposing at least a portion of an upper surface of a power line in a contact area defined in a passivation layer, a via insulation layer disposed on a passivation layer, including a via contact hole connected to an opening in a contact area, and including a protrusion protruding toward a center of a via contact hole, and a common electrode disposed on a via insulation layer and a power line and electrically connected to a power line in a contact area.

Abstract: An oxide semiconductor sputtering target used in a sputtering process to deposit an active layer of a TFT. The oxide semiconductor sputtering target is formed from a material based on a composition of In, Sn, Ga, Zn, and O. The material contains gallium oxide, tin oxide, zinc oxide, and indium oxide. The In, Sn, Ga, and Zn contents are in ranges of 60% to 80%, 0.5% to 8%, 5% to 15%, and 10% to 30% by weight with respect to the weight of In+Sn+Ga+Zn, respectively. A method of fabricating a TFT includes depositing an active layer using the oxide semiconductor sputtering target. Such a TFT is used in a liquid crystal display (LCD), an organic light-emitting display, an electroluminescence display, and the like.

Abstract: An indium tin oxide (ITO) target including calcium of about 0.001% to about 10% by atom, compared with an indium atom, and an ITO transparent electrode for a display apparatus manufactured from an ITO target are provided. A method of manufacturing the ITO target, the method including: preparing a slurry by mixing an indium oxide powder, a tin oxide powder, and a calcium-containing compound powder; granulating the slurry by milling and drying the slurry to prepare a granulated powder; shaping the granulated powder to form a shaped body; and sintering the shaped body. The ITO target including calcium manufactured by the method can reduce a number of times nodules and arcs are generated during sputtering, thereby growing a film which is able to be used for a long period of time.

Abstract: A network management system and method is disclosed that can add or modify, for example, a managed object, without recompiling or stopping operations of an executing network management system. Thus, preferred embodiments of the present invention allow a dynamic management of managed objects in a network management system.