Patents by Inventor Shin Hyuk Yang
Shin Hyuk Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9614020Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.Type: GrantFiled: August 4, 2015Date of Patent: April 4, 2017Assignee: Samsung Display Co., Ltd.Inventors: Shin-Hyuk Yang, Tae-Young Kim, Hye-Hyang Park
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Publication number: 20170062622Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate and a gate electrode disposed on the substrate. A gate insulating layer is disposed on the substrate and covers the gate electrode. A semiconductor layer is disposed on the gate insulating layer and includes a channel region, a source region, and a drain region. The source and drain regions are separated from each other by the channel region. An etch stopper is disposed on the semiconductor layer. A passivation layer is disposed on the semiconductor layer and covers the etch stopper. A source electrode and a drain electrode are disposed on the passivation layer and are respectively connected to the source region and the drain region. The passivation layer includes a first sub-passivation layer including aluminum oxide (AlOx).Type: ApplicationFiled: August 12, 2016Publication date: March 2, 2017Inventors: HYE HYANG PARK, EUN HYUN KIM, TAE YOUNG KIM, YEON KEON MOON, SHIN HYUK YANG
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Publication number: 20160254334Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.Type: ApplicationFiled: August 4, 2015Publication date: September 1, 2016Inventors: Shin-Hyuk YANG, Tae-Young KIM, Hye-Hyang PARK
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Publication number: 20160190328Abstract: A thin film transistor including a gate electrode disposed on a substrate, a channel overlapping the gate electrode, a source electrode electrically connected to the channel, and a drain electrode electrically connected to the channel and spaced apart from the source electrode. The channel includes a first channel layer contacting the source electrode and the drain electrode, and a second channel layer disposed on the first channel layer and spaced apart from the source electrode and the drain electrode.Type: ApplicationFiled: August 21, 2015Publication date: June 30, 2016Inventors: Shin-Hyuk YANG, Eun-Hyun KIM, Tae-Young KIM
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Patent number: 8716035Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.Type: GrantFiled: September 10, 2013Date of Patent: May 6, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Chun Won Byun, Shin Hyuk Yang, Sang Hee Park, Soon Won Jung, Seung Youl Kang, Chi Sun Hwang, Byoung Gon Yu
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Publication number: 20140011297Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.Type: ApplicationFiled: September 10, 2013Publication date: January 9, 2014Applicant: ELECTRONICS AND TELECOMMUNICATION RESEARCH INSTITUTEInventors: Sung Min YOON, Chun Won BYUN, Shin Hyuk YANG, Sang Hee PARK, Soon Won JUNG, Seung Youl KANG, Chi Sun HWANG, Byoung Gon YU
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Patent number: 8558295Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.Type: GrantFiled: July 19, 2010Date of Patent: October 15, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Chun Won Byun, Shin Hyuk Yang, Sang Hee Park, Soon Won Jung, Seung Youl Kang, Chi Sun Hwang, Byoung Gon Yu
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Patent number: 8476106Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.Type: GrantFiled: May 11, 2012Date of Patent: July 2, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
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Publication number: 20120225500Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.Type: ApplicationFiled: May 11, 2012Publication date: September 6, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Min YOON, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
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Patent number: 8198625Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.Type: GrantFiled: September 9, 2009Date of Patent: June 12, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
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Publication number: 20120007158Abstract: Provided is a non-volatile memory transistor having a double gate structure, including a first gate electrode formed on a substrate and to which an operating voltage is applied, a first gate insulating layer formed on the first gate electrode, source and drain electrodes formed on the first gate insulating layer at predetermined intervals, a channel layer formed on the first gate insulating layer between the source and drain electrodes, a second gate insulating layer formed on the channel layer, and a second gate electrode formed on the second gate insulating layer and connected to the first gate electrode such that the operating voltage is applied thereto. Accordingly, a turn-on voltage of the memory transistor can be easily controlled.Type: ApplicationFiled: June 30, 2011Publication date: January 12, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Min YOON, Shin Hyuk Yang, Chun Won Byun, Min Ki Ryu, Soon Won Jung
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Publication number: 20110305062Abstract: Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations.Type: ApplicationFiled: September 21, 2010Publication date: December 15, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chun Won BYUN, Byeong Hoon Kim, Sung Min Yoon, Kyoung Ik Cho, Sang Hee Park, Chi Sun Hwang, Min Ki Ryu, Shin Hyuk Yang, Oh Sang Kwon, Eun Suk Park
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Patent number: 8017045Abstract: Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.Type: GrantFiled: December 10, 2008Date of Patent: September 13, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Doo Hee Cho, Shin Hyuk Yang, Chun Won Byun, Chi Sun Hwang, Hye Yong Chu, Kyoung Ik Cho
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Publication number: 20110049592Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.Type: ApplicationFiled: July 19, 2010Publication date: March 3, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Min YOON, Chun Won BYUN, Shin Hyuk YANG, Sang Hee PARK, Soon Won JUNG, Seung Youl KANG, Chi Sun HWANG, Byoung Gon YUN
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Publication number: 20100243994Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.Type: ApplicationFiled: September 9, 2009Publication date: September 30, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Shin Hyuk Yang, Soon Woon Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
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Publication number: 20100006837Abstract: Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.Type: ApplicationFiled: July 1, 2009Publication date: January 14, 2010Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Doo Hee Cho, Sang Hee Park, Chi Sun Hwang, Hye Yong Chu, Kyoung Ik Cho, Shin Hyuk Yang, Chun Won Byun, Eun Suk Park, Oh Sang Kwon, Min Ki Ryu, Jae Heon Shin, Woo Seok Cheong, Sung Mook Chung, Jeong Ik Lee
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Publication number: 20090261389Abstract: A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.Type: ApplicationFiled: December 10, 2008Publication date: October 22, 2009Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Doo Hee Cho, Shin Hyuk Yang, Chun Won Byun, Chi Sun Hwang, Hye Yong Chu, Kyoung Ik Cho