Abstract: Provided is a work machine with a display device capable of reducing the usage of the capacity of a memory without increasing the cost while realizing display using image data in which the sharpness when being displayed is ensured. A hydraulic excavator 1 comprises: a monitor 4 for displaying a plurality of work mode screens 401 used during work and a plurality of service mode screens 402 used during maintenance; and a controller 6 for controlling display of the monitor 4, wherein the controller 6 stores first image data to be displayed on the plurality of work mode screens 401 and second image data to be displayed on the plurality of service mode screens 402, and the second image data includes specific image data X1 having a quality set to be different from a quality of the first image data.

Abstract: Provided is an imaging device in which the degree of freedom in the layout can be improved. The imaging device includes a first substrate part that includes a sensor pixel to perform photoelectric conversion, and a second substrate part that is disposed on one surface side of the first substrate part and that includes a reading circuit to output a pixel signal based on an electric charge outputted from the sensor pixel. The second substrate part includes a first semiconductor substrate on which a first transistor included in the reading circuit is disposed, and a second semiconductor substrate which is disposed on one surface side of the first semiconductor substrate and on which a second transistor included in the reading circuit is disposed.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: According to one embodiment, a memory system receives, from a host, a write request including a first identifier associated with one write destination block and storage location information indicating a location in a write buffer on a memory of the host in which first data to be written is stored. When the first data is to be written to a nonvolatile memory, the memory system obtains the first data from the write buffer by transmitting a transfer request including the storage location information to the host, transfers the first data to the nonvolatile memory, and writes the first data to the one write destination block.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A fuel cell includes a gas diffusion layer (GM) situated between a catalyst layer of the fuel cell and a flow field plate of the fuel cell. The GM has a first region and a second region along a thickness direction of the fuel cell. The first region is adjacent to the catalyst layer and has a first thermal conductivity. The second region is adjacent to the flow field plate and has a second thermal conductivity lower than the first thermal conductivity.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: Provided is a solid-state imaging element capable of reducing random noise in a pixel and suppressing crosstalk between adjacent pixels. A solid-state imaging element according to the present disclosure includes: a substrate; a plurality of photoelectric conversion units that is provided in the substrate; a first insulation film that is provided between the plurality of photoelectric conversion units adjacent to each other among the plurality of photoelectric conversion units, and has a fixed charge provided on an inner wall of a trench penetrating between a first surface of the substrate and a second surface opposite to the first surface; a second insulation film that is provided on an inner side of the first insulation film in the trench; at least one transistor that is provided on the first surface of the substrate; and a third insulation film that is provided on both sides of the trench or along the trench when viewed from the first surface.

Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.

Abstract: The present invention can provide a measurement device, a measurement method, and a bonding system, which enable estimation of the state of the underside of an electronic component mounted on a substrate. A measurement device performs measurements on an electronic component that is mounted on a main surface of a substrate, the measurement device comprising: a measurement part that measures a component height position, which is the height of the upper surface of the electronic component, and a substrate height position, which is the height of a non-mount region of the main surface of the substrate where the electronic component is not mounted; and an estimation part that estimates position information relating to a mount region of the main surface of the substrate where the electronic component is mounted, on the basis of the component height position and the substrate height position as measured by the measurement part.

Abstract: A main object of the present disclosure is to provide a biological particle sorting device that is easy to use or operate for both of two different types of users. The present disclosure provides a biological particle sorting device that operates in a first display mode or a second display mode on the basis of identification information, the device including a first display mode for receiving an input of operation control data related to biological particle sorting processing and a second display mode in which a processing execution operation screen is displayed. In the first display mode, processing condition setting screen related to the biological particle sorting processing is displayed, and the biological particle sorting device may receive an input of the operation control data via the processing condition setting screen.

Abstract: A main objective of the present disclosure is to improve the operability of a bioparticle sorting apparatus that accepts input of various items of data according to a touch operation. The present disclosure provides a bioparticle sorting apparatus including a display unit that is capable of touch input and displays a processing condition setting screen for accepting input of operation control data pertaining to a sorting process for a bioparticle-containing sample, the processing condition setting screen including a first display area for displaying an operation flow for setting a sorting process condition for the bioparticle-containing sample and a second display area for displaying measurement data pertaining to the bioparticle-containing sample, the first display area being disposed in an end section of the processing condition setting screen.

Abstract: A steel cord includes one or more core filaments, and outer sheath filaments provided so as to surround the one or more core filaments. The one or more core filaments and the outer sheath filaments have an identical wire diameter and an identical twist pitch. At least one of the one or more core filaments is a waved filament having a bent portion and a non-bent portion along a longitudinal direction.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: Provided is an imaging device in which the degree of freedom in the layout can be improved. The imaging device includes a first substrate part that includes a sensor pixel to perform photoelectric conversion, and a second substrate part that is disposed on one surface side of the first substrate part and that includes a reading circuit to output a pixel signal based on an electric charge outputted from the sensor pixel. The second substrate part includes a first semiconductor substrate on which a first transistor included in the reading circuit is disposed, and a second semiconductor substrate which is disposed on one surface side of the first semiconductor substrate and on which a second transistor included in the reading circuit is disposed.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: Provided is a mutant PHA synthase which produces of a PHA copolymer with a high or low 3HH ratio while maintaining PHA productivity. The mutant PHA synthase is a mutant polyhydroxyalkanoate synthase having an amino acid sequence having 85% or more sequence identity with the amino acid sequence of SEQ ID NO: 1 and having at least one of the following mutations (a) to (c): (a) a substitution of serine at 389th position from N-terminus of the amino acid sequence of SEQ ID NO: 1 with an amino acid other than serine; (b) a substitution of leucine at 436th position from the N-terminus of the amino acid sequence of SEQ ID NO: 1 with an amino acid other than leucine; and (c) a deletion of 11 to 19 amino acid residues from the C-terminus of the amino acid sequence of SEQ ID NO: 1.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.