Abstract: Disclosed is a semiconductor device consisting of a lead frame or a circuit board, at least one semiconductor element which is stacked on or mounted in parallel on the lead frame or on the circuit board, a copper wire which electrically connects the lead frame or the circuit board to the semiconductor element, and an encapsulating material which encapsulates the semiconductor element and the copper wire, wherein the wire diameter of the copper wire is equal to or more than 18 ?m and equal to or less than 23 ?m, the encapsulating material is composed of a cured product of an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), a spherical silica (C), and a metal hydroxide and/or metal hydroxide solid solution (D), and the semiconductor device is obtained through a step of encapsulating by the epoxy resin composition and molding, and then segmenting the resultant into pieces.

Abstract: An epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin (A) and a curing agent (B) and is used to encapsulate a copper wire (4) and a semiconductor element (1) connected to this copper wire (4). This epoxy resin composition is such that when a cured product of the epoxy resin composition is heated for 10 hours at 200° C., the amount of generation of a first corrosive gas that is a sulfur compound having corrosiveness to the copper wire (4) is less than or equal to 70 ppm.

Abstract: An epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin (A) and a curing agent (B) and is used to encapsulate a copper wire (4) and a semiconductor element (1) connected to this copper wire (4). This epoxy resin composition is such that when a cured product of the epoxy resin composition is heated for 10 hours at 200° C., the amount of generation of a first corrosive gas that is a sulfur compound having corrosiveness to the copper wire (4) is less than or equal to 70 ppm.

Abstract: Disclosed is a semiconductor device consisting of a lead frame or a circuit board, at least one semiconductor element which is stacked on or mounted in parallel on the lead frame or on the circuit board, a copper wire which electrically connects the lead frame or the circuit board to the semiconductor element, and an encapsulating material which encapsulates the semiconductor element and the copper wire, wherein the wire diameter of the copper wire is equal to or more than 18 ?m and equal to or less than 23 ?m, the encapsulating material is composed of a cured product of an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), a spherical silica (C), and a metal hydroxide and/or metal hydroxide solid solution (D), and the semiconductor device is obtained through a step of encapsulating by the epoxy resin composition and molding, and then segmenting the resultant into pieces.

Abstract: An epoxy resin composition comprising (A) an epoxy resin (B) a phenol resin, (C) a curing accelerator, (D) silica, and (E) alumina and/or aluminum hydroxide, wherein the amount of aluminum to the total amount of the epoxy resin composition is 0.25-5 wt % and 70 wt % or more of the silica has an average particle size of 25 ?m or less. The epoxy resin composition for semiconductor encapsulating and a semiconductor device comprising a semiconductor element encapsulated using the composition possess excellent characteristics in reliability during high temperature operation.

Abstract: An epoxy resin composition comprising (A) an epoxy resin (B) a phenol resin, (C) a curing accelerator, (D) silica, and (E) alumina and/or aluminum hydroxide, wherein the amount of aluminum to the total amount of the epoxy resin composition is 0.25-5 wt % and 70 wt % or more of the silica has an average particle size of 25 ?m or less. The epoxy resin composition for semiconductor encapsulating and a semiconductor device comprising a semiconductor element encapsulated using the composition possess excellent characteristics in reliability during high temperature operation.