Patents by Inventor Shinichiro Yahagi
Shinichiro Yahagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6432159Abstract: A magnetic mixture comprising at least two kinds of powders which are uniformly mixed with each other. Each powder exhibits a significant magnetic property when its constituent elements have a predetermined composition ratio. Magnetic properties of each powder are retained in the magnetic mixture which exhibits, as a whole, a soft magnetic property. The magnetic mixture is useful as a raw material for a powder magnetic core.Type: GrantFiled: September 28, 2000Date of Patent: August 13, 2002Assignee: Daido Tokushuko Kabushiki KaishaInventors: Takanobu Saito, Satoshi Takemoto, Toshiaki Yashiro, Haruo Koyama, Shinichiro Yahagi
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Patent number: 6183657Abstract: In a core material for the noise filter, powders of a flat and soft magnetic material is dispersed and buried into an insulating material such as rubber or plastic.Type: GrantFiled: May 18, 1999Date of Patent: February 6, 2001Assignee: Daido Tokushuko Kabushiki KaishaInventors: Akihiko Saito, Michiharu Ogawa, Kazuhisa Tsutsui, Shinichiro Yahagi
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Patent number: 6165627Abstract: An INVAR.RTM. or iron nickel alloy or iron nickel cobalt alloy wire has an area ratio of carbide existing at the grain boundaries of the wire in the finished wire of at most 4%, or an average grain size in the transverse direction within a range of 1 to 5 .mu.m. Such a wire has a superior twisting property.Type: GrantFiled: March 2, 1998Date of Patent: December 26, 2000Assignees: Sumitomo Electric Industries, Ltd., Daido Steel Co., Ltd.Inventors: Kenji Miyazaki, Shinichi Kitamura, Atsushi Yoshida, Shinichiro Yahagi, Takanobu Saito
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Patent number: 5372778Abstract: An electromagnetic stainless steel consists essentially of not more than 0.015 wt % of C, not more than 3.0 wt % of Si, not more than 0.5 wt % of Mn, not more than 0.030 wt % of P, not more than 0.030 wt % of S, 4-20 wt % of Cr, 0.2-7.0 wt % of Al, 0.02-0.50 wt % of Bi and the remainder being Fe and inevitable impurity and has excellent magnetic properties, electric resistance, cold forgeability and machinability.Type: GrantFiled: December 9, 1993Date of Patent: December 13, 1994Assignee: Daido Tokushuko Kabushiki KaishaInventors: Shinichiro Yahagi, Akihiko Saito
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Patent number: 5280729Abstract: To obtain stable linear torque-output characteristics over a wide torque range in a magnetostrictive torque detecting apparatus having a shaft to be measured, an exciting coil for magnetically exciting the shaft, and a detecting coil for detecting magnetostrictive components generated in the shaft distorted by a torque, the shaft is particularly composed of a substrate shaft portion made of a high yield point material and a shape anisotropic layer portion made of a high magnetostrictive material metallographically welded on an outer surface of the substrate shaft. The welded shape anisotropic layer portion is formed with two symmetrical groups of concave/convex portions each arranged at regular angular intervals on the outer circumferential surface thereof at an inclination angle with respect to the axial direction of the shaft.Type: GrantFiled: April 14, 1992Date of Patent: January 25, 1994Assignees: Nissan Motor Co., Ltd., Daido Steel Co., Ltd.Inventors: Hiroyuki Aoki, Munekatsu Shimada, Itaru Shibata, Mikiya Shinohara, Masashi Mizuno, Shinichiro Yahagi, Masaru Nagata, Nobuyuki Matsui, Shigeo Hanashima
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Patent number: 5281176Abstract: A contact member according to the invention effectively controls the production of sparks even at a high current, has a simple structure and is appropriate for use as a small contact brush as in a micromotor. A method of manufacturing a strip material for producing the contact member, the strip material being provided with a surface metal layer having a desired configuration which can be easily manufactured continuously, precisely and in large quantities with a high yield of contact members. Each of the contact members comprises a metal base plate and a sintered metal layer formed on a surface of the metal base plate. The contact member is cut from the strip material, which is manufactured by first printing a metal paste on desired positions on a metal base strip and then sintering the metal paste. The sintered metal layer is firmly joined to the metal base strip by diffusion bonding.Type: GrantFiled: July 21, 1992Date of Patent: January 25, 1994Assignee: Daido Tokushuko Kabushiki KaishaInventors: Shinichiro Yahagi, Keisuke Awazu, Osamu Kato, Takayoshi Shimizu, Tamotsu Nishinakagawa
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Patent number: 5107711Abstract: A torque sensor provides a specific property for a shaft member so as to improve sensitivity and so as to minimize hysteresis in measurement of the torque exerted thereon. The shaft member is provided specific composition achieving the desired level of sensitivity without increasing the hysteresis. In the alternative, the shaft member is processed in order to provide the desired property.Type: GrantFiled: March 6, 1989Date of Patent: April 28, 1992Assignees: Nissan Motor Company, Limited, Daidotokushuko KabushikigaishaInventors: Hiroyuki Aoki, Shinichiro Yahagi, Takanobu Saito
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Patent number: 4991447Abstract: A torque detecting device has a measuring shaft, an excitation device and a detector for detecting a magnetostriction passing through said measuring shaft. The device is able to measure the torque with accuracy even if a temperature gradient is produced in the axial direction of the measuring shaft by making the measuring shaft from a material having specified electromagnetic characteristics at least in a part in which said magnetostrictive force is detected.Type: GrantFiled: November 2, 1989Date of Patent: February 12, 1991Assignees: Daido Tokushuko Kabushiki Kaisha, Nissan Motor Company LimitedInventors: Shinichiro Yahagi, Hiroyuki Aoki, Takanobu Saito
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Patent number: 4963508Abstract: A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of the top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or mor GaP/GaAsP, GaAsP/GaAs superlattice layers. the wafer may be used to produce a seimconductor light emitting element which has a plurality of crystalline gaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer.Type: GrantFiled: February 22, 1990Date of Patent: October 16, 1990Assignees: Daido Tokushuko Kabushiki Kaisha, Nagoya Institute of TechnologyInventors: Masayoshi Umeno, Shiro Sakai, Shinichiro Yahagi
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Patent number: 4963320Abstract: A method for producing an anisotropic rare earth magnet is improved by applying compressing stress on a free surface of an compacted material at the time of extruding the compacted material in order to prevent forming cracks, and improved by using a double action punch provided with a core punch and a sleeve punch so as to mold a compacted material and extrude the compacted material into the anisotropic magnet material in a single heat process continuously.Type: GrantFiled: April 11, 1990Date of Patent: October 16, 1990Assignee: Daido Tokushuko Kabushiki KaishaInventors: Makoto Saito, Teruo Watanabe, Shinichiro Yahagi, Yasuaki Kasai, Norio Yoshikawa, Yutaka Yoshida, Toshiya Kinami, Hiyoshi Yamada
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Patent number: 4928154Abstract: A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or more GaP/GaAsP, GaAsP/GaAs superlattice layers. The wafer may be used to produce a semiconductor light emitting element which has a plurality of crystalline GaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer.Type: GrantFiled: March 20, 1989Date of Patent: May 22, 1990Assignees: Daido Tokushuko Kabushiki Kaisha, Nagoya Institute of TechnologyInventors: Masayoshi Umeno, Shiro Sakai, Shinichiro Yahagi
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Patent number: 4840073Abstract: A torque detecting device has a measuring shaft and a magnetic circuit incorporating the measuring shaft into a magnetic path which includes a device for detecting a magnet-ostrictive force passing through said measuring shaft. The device is able to increase the output sensitivity, decrease the rotative fluctuation of output and decrease the hysteresis by making the measuring shaft forming the magnetic path from an iron base alloy having a specific composition.Type: GrantFiled: September 25, 1987Date of Patent: June 20, 1989Assignees: Nissan Motor Company Ltd., Daido Tokushuko Kabushiki KaishaInventors: Hiroyuki Aoki, Shinichiro Yahagi, Takanobu Saito