Patents by Inventor Shin-itsu Takehashi
Shin-itsu Takehashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7306980Abstract: A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.Type: GrantFiled: June 21, 2004Date of Patent: December 11, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shin-itsu Takehashi, Tetsuo Kawakita, Yoshinao Taketomi, Hiroshi Tsutsu
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Patent number: 7084848Abstract: An active matrix liquid crystal display device has a plurality of unit pixels being arranged in a matrix configuration, each unit pixel being divided into a plurality of subpixels. Each of the subpixels has a subpixel electrode, a pixel transistor connected to the subpixel electrode, and a voltage controlling capacitor connected to the subpixel electrode. A voltage controlling capacitor line for supplying a compensation voltage signal is connected to the voltage controlling capacitor so that after the writing to the subpixel has been completed, the potential of the compensation voltage signal is varied to modulate the potential of the subpixel electrode to be a predetermined voltage, using the voltage controlling capacitor. Such combining of spatial dithering attained by a pixel-dividing technique and a capacitively-coupled driving method eliminates the need for digital-to-analog converter circuits, attains gray scale display based on a digital image signal, and achieves a reduction in power consumption.Type: GrantFiled: October 31, 2001Date of Patent: August 1, 2006Assignee: Matsushita Electric Industrial Co., LTDInventors: Kouji Senda, Yutaka Nanno, Shin-itsu Takehashi
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Patent number: 6909413Abstract: The present invention provides a liquid crystal display device having a liquid crystal display portion, a gate driver circuit, a source driver circuit, and a power supply circuit, where the liquid crystal display portion includes unit pixels with pixel switching elements and pixel electrodes arranged in a matrix. The pixel switching elements are thin film transistors that are made of polycrystalline silicon semiconductor formed on an insulating substrate. The power supply circuit is a charge pump-type power supply circuit, is made of a polycrystalline silicon semiconductor, and is a built-in circuit integrally formed on an insulating substrate. With such a configuration, a liquid crystal display device that greatly reduces power consumption is realized.Type: GrantFiled: October 29, 2001Date of Patent: June 21, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yutaka Nanno, Kouji Senda, Shin-itsu Takehashi
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Publication number: 20040229415Abstract: A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.Type: ApplicationFiled: June 21, 2004Publication date: November 18, 2004Applicant: Matsushita Elec. Ind. Co. Ltd.Inventors: Shin-itsu Takehashi, Tetsuo Kawakita, Yoshinao Taketomi, Hiroshi Tsutsu
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Patent number: 6812490Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.Type: GrantFiled: June 30, 2003Date of Patent: November 2, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shin-itsu Takehashi, Shigeo Ikuta, Tetsuo Kawakita, Mayumi Inoue, Keizaburo Kuramasu
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Publication number: 20040089878Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.Type: ApplicationFiled: June 30, 2003Publication date: May 13, 2004Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Shin-Itsu Takehashi, Shigeo Ikuta, Tetsuo Kawakita, Mayumi Inoue, Keizaburo Kuramasu
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Patent number: 6624473Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.Type: GrantFiled: November 9, 2000Date of Patent: September 23, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shin-itsu Takehashi, Shigeo Ikuta, Tetsuo Kawakita, Mayumi Inoue, Keizaburo Kuramasu
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Publication number: 20020196208Abstract: The present invention provides a liquid crystal display device having a liquid crystal display portion, a gate driver circuit, a source driver circuit, and a power supply circuit, where the liquid crystal display portion includes unit pixels with pixel switching elements and pixel electrodes arranged in a matrix. The pixel switching elements are thin film transistors that are made of polycrystalline silicon semiconductor formed on an insulating substrate. The power supply circuit is a charge pump-type power supply circuit, is made of a polycrystalline silicon semiconductor, and is a built-in circuit integrally formed on an insulating substrate. With such a configuration, a liquid crystal display device that greatly reduces power consumption is realized.Type: ApplicationFiled: June 20, 2002Publication date: December 26, 2002Inventors: Yutaka Nanno, Kouji Senda, Shin-itsu Takehashi
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Publication number: 20020047822Abstract: An active matrix liquid crystal display device has a plurality of unit pixels being arranged in a matrix configuration, each unit pixel being divided into a plurality of subpixels. Each of the subpixels has a subpixel electrode, a pixel transistor connected to the subpixel electrode, and a voltage controlling capacitor connected to the subpixel electrode. A voltage controlling capacitor line for supplying a compensation voltage signal is connected to the voltage controlling capacitor so that after the writing to the subpixel has been completed, the potential of the compensation voltage signal is varied to modulate the potential of the subpixel electrode to be a predetermined voltage, using the voltage controlling capacitor. Such combining of spatial dithering attained by a pixel-dividing technique and a capacitively-coupled driving method eliminates the need for digital-to-analog converter circuits, attains gray scale display based on a digital image signal, and achieves a reduction in power consumption.Type: ApplicationFiled: October 31, 2001Publication date: April 25, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Kouji Senda, Yutaka Nanno, Shin-itsu Takehashi
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Patent number: 5425833Abstract: The present invention discloses a semiconductor chip removal method of removing a semiconductor chip having thereon a chip electrode from a board having thereon a board electrode wherein the semiconductor chip is bonded to the board with a resin and these chip and board electrodes are connected together electrically by a wire. This semiconductor chip removal method comprises the following steps of: (a) cutting the bonding wire into two pieces by a cutter that presses its cutting edge against the base of the bonding wire on the board electrode's side; (b) separating the semiconductor chip from the board by a chip remover that forces the semiconductor chip sideways, with the adhesive strength of the resin weakened by the application of heat thereto; and (c) removing the semiconductor chip together with a piece of the bonding wire left on the chip electrode's side.Type: GrantFiled: November 12, 1993Date of Patent: June 20, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroaki Fujimoto, Shinji Umeda, Shin-itsu Takehashi