Abstract: A linear transport apparatus includes a transport cart, a first roller that rotates about a first rotation shaft extending from the transport cart along a first direction, a second roller that rotates about a second rotation shaft extending from the transport cart and forming an acute angle with the first rotation shaft, and a rail sandwiched between the first and second rollers to extend along a track on which the transport cart moves. The rail includes a first contact portion coming contact with the first roller and restricting movement of the transport cart in a second direction perpendicular to a direction in which the rail extends and the first direction, and a second contact portion that comes into contact with the second roller and is parallel to the second rotation shaft, and the rail includes a portion in which curvature of the track moves is different from another portion.

Abstract: Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench.

Abstract: Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench.

Abstract: Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device is disclosed. The semiconductor device includes a bit line formed to extend into a semiconductor substrate, a charge storage layer formed on the semiconductor substrate, a word line formed above the charge storage layer to extend across the bit line, a gate electrode formed on the charge storage layer under the word line and between bit lines, a first insulating film formed over the bit line and to extend in the direction of the bit line and a second insulating film that includes a different material than that of the first insulating film and formed to adjoin a side surface of the first insulating film.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device is disclosed. The semiconductor device includes a bit line formed to extend into a semiconductor substrate, a charge storage layer formed on the semiconductor substrate, a word line formed above the charge storage layer to extend across the bit line, a gate electrode formed on the charge storage layer under the word line and between bit lines, a first insulating film formed over the bit line and to extend in the direction of the bit line and a second insulating film that includes a different material than that of the first insulating film and formed to adjoin a side surface of the first insulating film.

Abstract: Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench.