Abstract: An imaging device includes at least one floating diffusion region, and a set of photoelectric conversion regions sharing the at least one floating diffusion region and that convert incident light into electric charges. The imaging device includes a first readout circuit and a second readout circuit. The first readout circuit is coupled to the at least one floating diffusion region and located at a first side of the set of photoelectric conversion region, and the second readout circuit is coupled to the at least one floating diffusion region. The second readout circuit includes a portion located at a second side of the set of photoelectric conversion regions that is opposite the first side, and the second readout circuit is configured to control the first readout circuit.

Abstract: A characteristic of a flicker component is detected to perform object detection at a higher speed and with higher accuracy. An object detection device according to an embodiment is provided with a solid-state imaging device (200) provided with a plurality of pixels arranged in a matrix, the solid-state imaging device that detects, according to a light amount incident on each of the pixels, occurrence of an event in the pixel, a flicker detection unit (12) that generates flicker information on the basis of the occurrence of the event detected by the solid-state imaging device, and an object detection unit (15) that detects an object on the basis of the flicker information detected by the solid-state imaging device.

Abstract: In a solid-state image sensor that transfers electric charges to a floating diffusion layer, exposure is started before transferring the electric charges to the floating diffusion layer. A photodiode generates electric charges by photoelectric conversion. An electric charge accumulation unit accumulates electric charges. The floating diffusion layer converts electric charges into a signal level corresponding to the amount of the electric charges. An exposure end transfer transistor transfers the electric charges from the photodiode to the electric charge accumulation unit when a predetermined exposure period ends. A reset transistor initializes a voltage of the floating diffusion layer to a predetermined reset level when the exposure period ends. When a new exposure period is started after the electric charges are transferred to the electric charge accumulation unit, a discharge transistor discharges electric charges newly generated in the photodiode.

Abstract: The signal quality of a solid-state imaging element configured to detect address events is enhanced. The solid-state imaging element has open pixels and light-blocked pixels arrayed therein. In the solid-state imaging element, the open pixels each detect whether or not an amount of change in incident light amount exceeds a predetermined threshold, and output a detection signal indicating a result of the detection. On the other hand, in the solid-state imaging element, the light-blocked pixels each output a correction signal based on an amount of noise generated in the open pixels each configured to detect whether or not an amount of change in incident light amount exceeds the predetermined threshold and to output a detection signal indicating a result of the detection.

Abstract: The present disclosure is to improve characteristics in the dark without making a device structure complicated. An imaging apparatus includes a photoelectric converter that generates a charge according to a received light amount, a charge transfer region that is disposed at a place inside a substrate not exposed to a substrate surface and in contact with the photoelectric converter, and to which the charge generated by the photoelectric converter is transferred, a charge accumulation region that is disposed apart from the charge transfer region in a substrate surface direction and accumulates the charge transferred from the charge transfer region, a transistor that performs control to transfer the charge from the charge transfer region to the charge accumulation region, and a detector that outputs a detection signal indicating whether or not an absolute value of a change amount of an electrical signal according to an amount of the charge transferred by the transistor exceeds a predetermined threshold value.

Abstract: To suppress occurrence of a delay in detection of a valid address event to be originally detected. An image pickup element includes a plurality of pixels (100), a pixel address event detection unit (120), a region address event detection unit (320), and a pixel selection unit (310). The pixel (100) includes a photoelectric conversion unit (110) that performs photoelectric conversion of incident light. The pixel address event detection unit (120) is arranged in each pixel and detects a pixel address event that is an address event of a pixel itself. The pixel address event is detected based on a change amount of charge generated by the photoelectric conversion. The region address event detection unit (320) detects a region address event that is an address event in a predetermined region. The region address event is detected based on a change in a charge amount generated by the photoelectric conversion in a plurality of pixels in the predetermined region among the plurality of pixels.

Abstract: To output event information at high sensitivity and high speed with a simple configuration.

Abstract: In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed. Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.

Abstract: A solid-state image sensor according to the present disclosure includes a photodiode, a conversion circuit (current-voltage conversion circuit), a luminance change detection circuit (comparator), and a light-shielding unit (light-shielding film). The photodiode photoelectrically converts incident light to generate a photocurrent. The conversion circuit (current-voltage conversion circuit) converts the photocurrent into a voltage signal. The luminance change detection circuit (comparator) detects a change in luminance of the incident light on the basis of the voltage signal. The light-shielding unit (light-shielding film) shields incidence of light on the impurity diffusion region included in a circuit that inputs the voltage signal to the luminance change detection circuit (comparator).

Abstract: A solid-state imaging element according to the present disclosure is provided with a first substrate (light reception chip) and a second substrate (detection chip). The first substrate (light reception chip) is provided with a photodiode that photoelectrically converts incident light to generate a photocurrent. The second substrate (detection chip) is provided with a luminance change detection circuit (current-voltage conversion circuit) that detects a change in luminance of the incident light on the basis of a voltage signal converted by a conversion circuit (current-voltage conversion circuit) that converts the photocurrent into the voltage signal, and is bonded to the first substrate (light reception chip). A light shielding unit (light shielding film) provided in at least any one of the first substrate (light reception chip) or the second substrate (detection chip) and shields light between an active element (transistor TR) provided in the second substrate (detection chip) and the photodiode is included.

Abstract: Please replace the currently pending Abstract with the following amended A solid-state imaging device is provided with a plurality of photoelectric conversion elements, a plurality of current-voltage conversion circuits, a plurality of address event detection circuits, first ground wiring, and second ground wiring. The plurality of photoelectric conversion elements is arranged side by side in a first region. The plurality of current-voltage conversion circuits converts currents output from the plurality of photoelectric conversion elements into voltages, respectively. The plurality of address event detection circuits detects changes in voltages output from the plurality of current-voltage conversion circuits, respectively. The first ground wiring is provided in a second region located outside the first region, and supplies first ground potential to the plurality of photoelectric conversion elements.

Abstract: A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

Abstract: To improve image quality of image data in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photodiode, a pixel signal generation unit, and a detection unit. In the solid-state image sensor, the photodiode generates electrons and holes by photoelectric conversion. The pixel signal generation unit generates a pixel signal having a voltage according to an amount of one of the electrons and the holes. The detection unit detects whether or not a change amount in the other of the electrons and the holes has exceeded a predetermined threshold and outputs a detection signal.

Abstract: A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The plurality of first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits.

Abstract: The signal quality of a solid-state imaging element configured to detect address events is enhanced. The solid-state imaging element has open pixels and light-blocked pixels arrayed therein. In the solid-state imaging element, the open pixels each detect whether or not an amount of change in incident light amount exceeds a predetermined threshold, and output a detection signal indicating a result of the detection. On the other hand, in the solid-state imaging element, the light-blocked pixels each output a correction signal based on an amount of noise generated in the open pixels each configured to detect whether or not an amount of change in incident light amount exceeds the predetermined threshold and to output a detection signal indicating a result of the detection.

Abstract: In a solid-state image sensor that transfers electric charges to a floating diffusion layer, exposure is started before transferring the electric charges to the floating diffusion layer. A photodiode generates electric charges by photoelectric conversion. An electric charge accumulation unit accumulates electric charges. The floating diffusion layer converts electric charges into a signal level corresponding to the amount of the electric charges. An exposure end transfer transistor transfers the electric charges from the photodiode to the electric charge accumulation unit when a predetermined exposure period ends. A reset transistor initializes a voltage of the floating diffusion layer to a predetermined reset level when the exposure period ends. When a new exposure period is started after the electric charges are transferred to the electric charge accumulation unit, a discharge transistor discharges electric charges newly generated in the photodiode.

Abstract: The signal quality of a solid-state imaging element configured to detect address events is enhanced. The solid-state imaging element has open pixels and light-blocked pixels arrayed therein. In the solid-state imaging element, the open pixels each detect whether or not an amount of change in incident light amount exceeds a predetermined threshold, and output a detection signal indicating a result of the detection. On the other hand, in the solid-state imaging element, the light-blocked pixels each output a correction signal based on an amount of noise generated in the open pixels each configured to detect whether or not an amount of change in incident light amount exceeds the predetermined threshold and to output a detection signal indicating a result of the detection.

Abstract: In a solid-state image sensor that transfers electric charges to a floating diffusion layer, exposure is started before transferring the electric charges to the floating diffusion layer. Electric charges are generated by photoelectric conversion in a photodiode and they are accumulated in an accumulation unit. An exposure end transfer transistor transfers the electric charges from the photodiode to the accumulation unit when a predetermined exposure period ends. A reset transistor initializes a voltage of a floating diffusion layer to a predetermined reset level when the exposure period ends. When a new exposure period is started after the electric charges are transferred to the accumulation unit, a discharge transistor discharges electric charges newly generated in the photodiode. When processing of converting a predetermined reset level into a digital signal ends, a conversion end transistor transfers the electric charges from the accumulation unit to the floating diffusion layer.

Abstract: A characteristic of a flicker component is detected to perform object detection at a higher speed and with higher accuracy. An object detection device according to an embodiment is provided with a solid-state imaging device (200) provided with a plurality of pixels arranged in a matrix, the solid-state imaging device that detects, according to a light amount incident on each of the pixels, occurrence of an event in the pixel, a flicker detection unit (12) that generates flicker information on the basis of the occurrence of the event detected by the solid-state imaging device, and an object detection unit (15) that detects an object on the basis of the flicker information detected by the solid-state imaging device.

Abstract: A state of a driver is detected more quickly. A state detection device according to an embodiment is provided with a first solid-state imaging device (200) provided with a plurality of pixels arranged in a matrix, the first solid-state imaging device that detects, according to a light amount incident on each of the pixels, occurrence of an event in the pixel, and a state detection unit (12, 15, 16) that detects a state of a driver on the basis of the occurrence of the event detected by the first solid-state imaging device.