Abstract: A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.

Abstract: A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.

Abstract: A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to bring the pulling up speed close to a predetermined speed set value, and so as to bring the heater temperatures close to predetermined target temperature values. The ratio of electrical power between the heaters is controlled to agree with a predetermined power ratio set value which varies according to the crystal pulling up length, and the heater temperatures change along with this change, which causes disturbance to the diameter control. To compensate for this, heater temperature changes along with the power ratio set value change are taken into account in advance in the temperature set values. Accordingly, along with change of the power ratio set value, the temperature set values change to values appropriate for the current power ratio set value.

Abstract: A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to bring the pulling up speed close to a predetermined speed set value, and so as to bring the heater temperatures close to predetermined target temperature values. The ratio of electrical power between the heaters is controlled to agree with a predetermined power ratio set value which varies according to the crystal pulling up length, and the heater temperatures change along with this change, which causes disturbance to the diameter control. To compensate for this, heater temperature changes along with the power ratio set value change are taken into account in advance in the temperature set values. Accordingly, along with change of the power ratio set value, the temperature set values change to values appropriate for the current power ratio set value.

Abstract: In the crystal growth rate (V), there is such a permissible range that the given quality of silicon single crystal can be maintained. This permissible range is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using the log data, the actual value of crystal growth rate (V) is determined. The actual value is compared with the permissible range. Any region of silicon single crystal corresponding to crystal growth rate (V) falling within the permissible range is judged as being a conforming region satisfying given standards, while any region of silicon single crystal corresponding to crystal growth rate (V) falling outside the permissible range is judged as being a defective region not satisfying given standards.

Abstract: This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.