Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module connected to the vacuum transfer module and including: a substrate processing chamber; a stage disposed in the substrate processing chamber; a first ring and a second ring disposed so as to surround a substrate placed on the stage; and a lifter configured to vertically move the first ring and the second ring with respect to the stage; a storage module connected to the vacuum transfer module and including a vertically movable ring storage; and a controller configured to selectively execute a simultaneous transfer mode in which the first ring and the second ring are simultaneously transferred between the substrate processing module and the storage module, and a sole transfer mode in which the second ring is solely transferred between the substrate processing module and the storage module.

Abstract: An optical fiber characteristic measurement device (1) includes: a first optical splitter (12) that splits frequency-modulated modulated light (L1) into pump light (LP) and reference light (LR); a second optical splitter (16) that causes the pump light to be incident from one end of an optical fiber under test (FUT) and outputs Brillouin scattered light (LS) generated inside the optical fiber under test; a first detector (19) that detects interference light between the Brillouin scattered light output from the second optical splitter and the reference light; an analyzer (20) that obtains a Brillouin gain spectrum which is a spectrum of the Brillouin scattered light from a detection signal (S1) output from the first detector; a second detector (22, 31) that detects a double wave component having a frequency that is double a modulation frequency of the modulated light included in an intensity component of each frequency of the Brillouin gain spectrum obtained by the analyzer; and a measurer (23) that measures c

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

Abstract: There is a substrate support comprising: a substrate supporting portion; a first ring disposed to surround the substrate supporting portion; a second ring surrounding the first ring without overlapping the first ring in plan view; a third ring disposed below the first ring and the second ring such that an inner portion of the third ring overlaps the first ring in plan view and an outer portion of the third ring overlaps the second ring in plan view, and having a hole at the inner portion of the third ring; a lifter having a first engaging portion protruding upward from the hole of the third ring and engaged with the first ring and a second engaging portion disposed below the first engaging portion and engaged with the third ring; and an actuator configured to raise and lower the lifter.

Abstract: A plasma processing system is provided. The system comprises a plasma processing apparatus, a transfer apparatus connected to the plasma processing apparatus, and a controler. The plasma processing apparatus includes a substrate support including a support unit for a substrate as well as an annular member disposed to surround the substrate. The substrate support includes a plurality of insertion holes passing through the support unit, lifters to elevate/lower the annular member through the insertion holes and a temperature adjustment mechanism for adjusting a temperature of the support unit. The transfer apparatus includes a transfer mechanism for transferring the annular member to the substrate support. The annual member has includes concave portions in its bottom surface, into which upper end the lifters are fitted.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

Abstract: Provided is a substrate processing apparatus including a chamber; a placing table provided inside the chamber and configured to place a processing target substrate thereon; a pedestal configured to support the placing table from a lower side thereof; an exhaust port disposed below the pedestal; and a collecting member configured to collect a deposition in the chamber. The collecting member is provided on a lower surface of the pedestal.

Abstract: A substrate support includes a substrate support surface, an annular member support surface, three or more lifters configured to protrude from the annular member support surface and vertically moved to adjust an amount of protrusion, and an elevating mechanism for raising or lowering each lifter. A recess having an upwardly recessed concave surface is provided at a position corresponding to each lifter on a bottom surface of the annular member. In a plan view, the recess is larger in size than a transfer error of the annular member above the annular member support surface and larger in size than an upper end portion of the lifter. The upper end portion of each lifter is formed in a hemispherical shape that gradually tapers upward, and a curvature of the concave surface is smaller than a curvature of a convex surface.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.