Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

Abstract: There is a substrate support comprising: a substrate supporting portion; a first ring disposed to surround the substrate supporting portion; a second ring surrounding the first ring without overlapping the first ring in plan view; a third ring disposed below the first ring and the second ring such that an inner portion of the third ring overlaps the first ring in plan view and an outer portion of the third ring overlaps the second ring in plan view, and having a hole at the inner portion of the third ring; a lifter having a first engaging portion protruding upward from the hole of the third ring and engaged with the first ring and a second engaging portion disposed below the first engaging portion and engaged with the third ring; and an actuator configured to raise and lower the lifter.

Abstract: A plasma processing system is provided. The system comprises a plasma processing apparatus, a transfer apparatus connected to the plasma processing apparatus, and a controler. The plasma processing apparatus includes a substrate support including a support unit for a substrate as well as an annular member disposed to surround the substrate. The substrate support includes a plurality of insertion holes passing through the support unit, lifters to elevate/lower the annular member through the insertion holes and a temperature adjustment mechanism for adjusting a temperature of the support unit. The transfer apparatus includes a transfer mechanism for transferring the annular member to the substrate support. The annual member has includes concave portions in its bottom surface, into which upper end the lifters are fitted.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

Abstract: Provided is a substrate processing apparatus including a chamber; a placing table provided inside the chamber and configured to place a processing target substrate thereon; a pedestal configured to support the placing table from a lower side thereof; an exhaust port disposed below the pedestal; and a collecting member configured to collect a deposition in the chamber. The collecting member is provided on a lower surface of the pedestal.

Abstract: A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.

Abstract: A substrate support includes a substrate support surface, an annular member support surface, three or more lifters configured to protrude from the annular member support surface and vertically moved to adjust an amount of protrusion, and an elevating mechanism for raising or lowering each lifter. A recess having an upwardly recessed concave surface is provided at a position corresponding to each lifter on a bottom surface of the annular member. In a plan view, the recess is larger in size than a transfer error of the annular member above the annular member support surface and larger in size than an upper end portion of the lifter. The upper end portion of each lifter is formed in a hemispherical shape that gradually tapers upward, and a curvature of the concave surface is smaller than a curvature of a convex surface.

Abstract: A substrate processing apparatus includes a processing container; a placement table; a plurality of pins provided on the placement table configured to perform delivery of the substrate; a plurality of drivers configured to vertically drive the plurality of pins, respectively; a plurality of measuring devices each including an encoder configured to measure height positions of the plurality of pins, respectively. The substrate processing apparatus also includes a controller configured to: measure the height positions of the plurality of pins; select a reference pin; estimate a reference height position; calculate an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; and control the drivers, which drive the other pins, to adjust driving speeds of the other pins to an adjustment speed.

Abstract: A processing apparatus includes a first temperature measuring unit configured to measure a surface temperature of a first member exposed in a first closed space, a supply line configured to supply a low-dew point gas into the first closed space and a control unit configured to control a flow rate of the low-dew point gas. The control unit performs a first process to a third process. In the first process, an absolute humidity of a gas within the first closed space at a position of a surface of the first member is specified for the flow rate of the low-dew point gas. In the second process, a saturated absolute humidity at the surface temperature of the first member is specified. In the third process, the flow rate of the low-dew point gas is controlled based on the absolute humidity of the gas and the saturated absolute humidity.

Abstract: A plasma processing apparatus includes supporting members, connecting members and a sliding member. Each of the supporting members is partially disposed in a disc-shaped cooling plate and configured to support an upper electrode in a direction of gravity. Each of the connecting members is partially disposed in the cooling plate and extends in a diametrical direction of the cooling plate to be engaged with the corresponding supporting member. The sliding member is configured to slide the connecting members inward in the diametrical direction of the cooling plate, thereby pushing upward the supporting member and lifting the upper electrode to the cooling plate.

Abstract: A substrate delivery method includes receiving a substrate by protruding a plurality of pins, detecting a position of a predetermined portion of the substrate in a state where the substrate is supported by the plurality of pins, estimating a deviation amount and a deviation direction of a positional deviation between a center position of the substrate and a predetermined reference position using a detected result, tilting the substrate, and bringing the substrate into partial contact with the placing table by lowering the plurality of pins at a same speed in a state where the substrate is tilted, and disposing the substrate on the placing table while moving the center position of the substrate by the deviation amount in a direction opposite to the deviation direction by using rotation of the substrate in a vertical direction due to contact with the placing table by continuously lowering the plurality of pins.

Abstract: A processing apparatus includes a first temperature measuring unit configured to measure a surface temperature of a first member exposed in a first closed space, a supply line configured to supply a low-dew point gas into the first closed space and a control unit configured to control a flow rate of the low-dew point gas. The control unit performs a first process to a third process. In the first process, an absolute humidity of a gas within the first closed space at a position of a surface of the first member is specified for the flow rate of the low-dew point gas. In the second process, a saturated absolute humidity at the surface temperature of the first member is specified. In the third process, the flow rate of the low-dew point gas is controlled based on the absolute humidity of the gas and the saturated absolute humidity.

Abstract: A pin control method includes: measuring respective height positions of a plurality of pins, which is vertically driven respectively by a plurality of driving units while supporting a substrate; selecting a reference pin, which serves as a reference for speed control, from the plurality of pins using the measured height positions of the plurality of pins; estimating, with respect to the selected reference pin, a reference height position, which is a height position after a predetermined time has passed since the height positions of the plurality of pins were measured; calculating an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; controlling the driving units, which drive the other pins, to adjust driving speeds of the other pins to the adjustment speed.

Abstract: A substrate processing apparatus includes a processing container; a placement table; a plurality of pins provided on the placement table configured to perform delivery of the substrate; a plurality of drivers configured to vertically drive the plurality of pins, respectively; a plurality of measuring devices each including an encoder configured to measure height positions of the plurality of pins, respectively. The substrate processing apparatus also includes a controller configured to: measure the height positions of the plurality of pins; select a reference pin; estimate a reference height position; calculate an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; and control the drivers, which drive the other pins, to adjust driving speeds of the other pins to an adjustment speed.

Abstract: A substrate delivery method includes receiving a substrate by protruding a plurality of pins, detecting a position of a predetermined portion of the substrate in a state where the substrate is supported by the plurality of pins, estimating a deviation amount and a deviation direction of a positional deviation between a center position of the substrate and a predetermined reference position using a detected result, tilting the substrate, and bringing the substrate into partial contact with the placing table by lowering the plurality of pins at a same speed in a state where the substrate is tilted, and disposing the substrate on the placing table while moving the center position of the substrate by the deviation amount in a direction opposite to the deviation direction by using rotation of the substrate in a vertical direction due to contact with the placing table by continuously lowering the plurality of pins.

Abstract: A pin control method includes: measuring respective height positions of a plurality of pins, which is vertically driven respectively by a plurality of driving units while supporting a substrate; selecting a reference pin, which serves as a reference for speed control, from the plurality of pins using the measured height positions of the plurality of pins; estimating, with respect to the selected reference pin, a reference height position, which is a height position after a predetermined time has passed since the height positions of the plurality of pins were measured; calculating an adjustment speed for making the height positions of the pins other than the reference pin match with the estimated reference height position; controlling the driving units, which drive the other pins, to adjust driving speeds of the other pins to the adjustment speed.