Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A resonant vibration actuator is provided, comprising: a casing, a mover, a plurality of electromagnet sets, two elastic suspensions, and a connecting circuit; the casing is provided with connection terminals for connection on the outside; the mover comprising: a mover frame, a plurality of permanent magnet units, two magnetic backs, the permanent magnet units and the magnetic backs being arranged in the mover frame; the electromagnet sets being arranged between two permanent magnet units of the mover; the elastic suspensions being connected to the casing and the mover respectively through two connection portions at both ends; the connecting circuit being used to connect the electromagnet set and the connection terminals outside the casing; wherein, by energizing the electromagnet set, the electromagnet acts on the permanent magnet unit to make the mover move relatively in the casing to generate vibration.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: A pre-embedded piece includes a reinforcing steel bar and a screw rod. The reinforcing steel bar includes a body and an embossed portion formed on an outer periphery of the body. An end of the screw rod is connected to an end of the reinforcing steel bar. A method for producing a pre-embedded piece includes preparing a reinforcing steel bar and a screw rod. The reinforcing steel bar includes a body and an embossed portion formed on an outer periphery of the body. The reinforcing steel bar and the screw rod are placed end to end and fused together. A reinforcing steel structure of an embodiment includes a plurality of main bars, a plurality of hooped columns, and a plurality of pre-embedded pieces. A reinforcing steel structure of another embodiment includes a plurality of hooped columns and a plurality of pre-embedded pieces.