Abstract: Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

Abstract: Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

Abstract: Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

Abstract: Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

Abstract: A tape carrier for semiconductor apparatus and a method of manufacturing the tape carrier includes three or more layers and contact holes of small size. A peelable agent is applied to a planar substrate made of glass or the like, and plural insulating layers and plural conductive layers are alternatingly formed thereon in predetermined patterns. The peelable agent is then removed to peel the tape carrier from the substrate. The tape carrier includes the insulating layers and the conductive layers and has projection electrodes but no tape base.

Abstract: A semiconductor device is provided with an electrically conductive cap having a sufficiently thick edge portion for preventing warpage due to the hardening of an encapsulating resin. Since the edge portion of the conductive cap is formed into the shape of a frame, and its thickness is made large, the mechanical strength of the conductive cap is improved, so that even when stress is applied to the conductive cap owing to the hardening of the encapsulating resin, the conductive cap is unlikely to undergo deformation, thereby preventing the warping of the semiconductor device.

Abstract: A heat dissipating member including a heat sink is placed on a module base board with flip-chips mounted thereon, with metallic plates and first adhesive materials of a good thermal conductivity interposed between the heat dissipating member and the flip-chips in a close contact relation and with a second adhesive material interposed between the heat dissipating member and the base board, wherein the first adhesive material is selected to have a melting point lower than that of the second adhesive material, and then such an assembly is heated so that both the first and second adhesive materials are melted and the metallic plates are mounted onto the flip-chips and the heat dissipating member is mounted onto the base board. A gap is formed between the metallic plates and the heat dissipating member as a result of earlier solidification of the second adhesive material than that of the first adhesive material so as to be precisely controlled such that a heat transferring effect therebetween may not be degraded.

Abstract: A heat dissipating member including a heat sink is placed on a module base board with flip-chips mounted thereon, with metallic plates and first adhesive materials of a good thermal conductivity interposed between the heat dissipating member and the flip-chips in a close contact relation and with a second adhesive material interposed between the heat dissipating member and the base board, wherein the first adhesive material is selected to have a melting point lower than that of the second adhesive material, and then such an assembly is heated so that both the first and second adhesive materials are melted and the metallic plates are mounted onto the flip-chips and the heat dissipating member is mounted onto the base board. A gap is formed between the metallic plates and the heat dissipating member as a result of earlier solidification of the second adhesive material than that of the first adhesive material so as to be precisely controlled such that a heat transferring effect therebetween may not be degraded.