Patents by Inventor Shin NANBA

Shin NANBA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11430904
    Abstract: A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: August 30, 2022
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Ayumu Yano, Minato Seno, Shin Nanba
  • Publication number: 20200313010
    Abstract: A solar cell includes a semiconductor substrate having a first principal surface and a second principal surface and having a first conductivity type, a third amorphous silicon layer disposed on the second principal surface, and a fourth amorphous silicon layer disposed on the third amorphous silicon layer and having a second conductivity type different from the first conductivity type. The impurity concentration of the first conductivity type in the third amorphous silicon layer is higher than the impurity concentration of the first conductivity type in the semiconductor substrate and lower than the impurity concentration of the second conductivity type in the fourth amorphous silicon layer.
    Type: Application
    Filed: March 26, 2020
    Publication date: October 1, 2020
    Inventor: Shin NANBA
  • Publication number: 20200313017
    Abstract: A solar cell module includes a first solar cell subgroup including two first solar cell strings connected in series, a second solar cell subgroup including two second solar cell strings connected in series, a first bypass diode connected in parallel to the first solar cell subgroup, a second bypass diode connected in parallel to the second solar cell subgroup, a pair of first external wires, and a pair of second external wires. A first portion on a high-potential side of a low-potential side first solar cell string having lower potential out of the two first solar cell strings and a second portion on a high-potential side of a low-potential side second solar cell string having lower potential out of the two second solar cell strings are electrically connected to each other.
    Type: Application
    Filed: March 25, 2020
    Publication date: October 1, 2020
    Applicant: Panasonic Corporation
    Inventor: Shin Nanba
  • Publication number: 20200006590
    Abstract: A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.
    Type: Application
    Filed: September 5, 2019
    Publication date: January 2, 2020
    Inventors: Ayumu YANO, Minato SENO, Shin NANBA
  • Publication number: 20190386160
    Abstract: A solar cell includes: a semiconductor substrate of a first conductivity type having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type disposed above the back surface; and a second semiconductor layer of a second conductivity type disposed above the back surface. The semiconductor substrate includes: a first impurity region including a first conductivity type impurity; and a third impurity region including the first conductivity type impurity and provided between the first impurity region and the first semiconductor layer. A concentration of the first conductivity type impurity in the third impurity region is higher than a concentration of the first conductivity type impurity in the first impurity region. A junction between the semiconductor substrate and the first semiconductor layer is a heterojunction.
    Type: Application
    Filed: August 29, 2019
    Publication date: December 19, 2019
    Inventors: Minato SENO, Shin NANBA
  • Publication number: 20180287003
    Abstract: A solar cell includes: a crystalline semiconductor substrate of a first conductivity type or a second conductivity type; an amorphous layer provided on a principal surface of the substrate; a first-conductivity-type semiconductor layer provided on the amorphous layer; a first high-conduction portion provided inside a first recess portion in the amorphous layer, the first high-conduction portion having a higher conductivity than the amorphous layer, the first high-conduction portion being in contact with the first-conductivity-type semiconductor layer; and a first electrode provided on the first-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer may be provided in a first region. The solar cell may further include a second-conductivity-type semiconductor layer provided on the amorphous layer in a second region and a second electrode provided on the second-conductivity-type semiconductor layer.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 4, 2018
    Inventors: Minato SENO, Shin NANBA, Yasufumi TSUNOMURA