Abstract: A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.

Abstract: A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.

Abstract: A ceramic electronic device includes a multilayer structure having a substantially rectangular parallelepiped shape, a first cover layer, and a second cover layer that is provided on a second end of the multilayer structure in the stacking direction, a main component of the second cover layer being ceramic, a porosity of the second cover layer being higher than that of the first cover layer. Q=(A+B)/2C×100(%) is 0.5% or more and 1.6% or less, when, at an interface of the second cover layer on a side of the first cover layer, two heights of curvature portions of both ends of the interface are respectively a height A and a height B, and a shortest height from the first cover layer to the second cover layer is a height C.

Abstract: A ceramic electronic component has an element body having a dielectric and internal electrodes, and external electrodes formed on the element body. Each of the external electrodes has an electrical conductive layer connected to the internal electrodes. The electrical conductive layer has an outer side and an inner side. The outer side is farther from the element body than the inner side. The outer side includes more voids than the inner side.

Abstract: A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.