Abstract: An information processing method for acquiring location information of an object includes acquiring location information of the object based on location management information in which identification information of the object, the location information of the object, and time information indicating an acquisition time of the location information are associated; acquiring the time information associated with the acquired location information as time information indicating a time before movement of the object starts, based on the location management information; tracking, by image processing, the object in a captured moving image of surroundings of the object based on the location information of the object; and acquiring current location information of the object at an end of the movement based on a result of the tracking. In the tracking, the object is tracked in a part of the captured moving image starting from a moving image time corresponding to the acquired time information.

Abstract: A parts mounting system includes a parts mounting device in a mounting area to mount parts on a board, a robot to transport a parts unit operable to hold the parts, and a placement section in a work area in which a worker works. The work area is separate from the mounting area, to allow a plurality of parts units to be placed therein or thereon, the plurality of parts units being to be transported or having been transported by the robot.

Abstract: The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A multiple row combination ball bearing 10 includes at least two rows of ball bearings 11A and 11B. A counterbore 12d is formed on a groove shoulder 12c of an outer ring 12 of the respective ball bearings 11A and 11B. The respective ball bearings 11A and 11B have an inner and outer diameter dimension and a width dimension corresponding to a standard bearing of the ISO standard. An extension line L of a contact angle ? of the ball bearing 11A passes through an axial direction end plane 12e of the ball bearing 11B which is adjacent to the ball bearing 11A at one side in the axial direction. The extension line L of the contact angle ? of the adjacent ball bearing 11B passes through the axial direction end plane 13e of the ball bearing 11A.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

Abstract: A multiple row combination ball bearing 10 includes at least two rows of ball bearings 11A and 11B. A counterbore 12d is formed on a groove shoulder 12c of an outer ring 12 of the respective ball bearings 11A and 11B. The respective ball bearings 11A and 11B have an inner and outer diameter dimension and a width dimension corresponding to a standard bearing of the ISO standard. An extension line L of a contact angle ? of the ball bearing 11A passes through an axial direction end plane 12e of the ball bearing 11B which is adjacent to the ball bearing 11A at one side in the axial direction. The extension line L of the contact angle ? of the adjacent ball bearing 11B passes through the axial direction end plane 13e of the ball bearing 11A.

Abstract: A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Abstract: A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

Abstract: A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Abstract: A method of treating a dielectric layer on a substrate is described. The method comprises forming the dielectric layer on the substrate, wherein the dielectric layer comprises a dielectric constant value less than the dielectric constant of SiO2. A feature pattern is formed in the dielectric layer using an etching process. Following the etching process, the feature pattern is treated using a nitrogen-containing plasma in order to form nitride surface layers by introducing nitrogen to the exposed surfaces of the dielectric layer in the feature pattern. Thereafter, the feature pattern is selectively etched to partially or fully remove the nitride surface layers.

Abstract: A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Abstract: A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Abstract: A method of treating a dielectric layer on a substrate is described. The method comprises forming the dielectric layer on the substrate, wherein the dielectric layer comprises a dielectric constant value less than the dielectric constant of SiO2. A feature pattern is formed in the dielectric layer using an etching process. Following the etching process, the feature pattern is treated using a nitrogen-containing plasma in order to form nitride surface layers by introducing nitrogen to the exposed surfaces of the dielectric layer in the feature pattern. Thereafter, the feature pattern is selectively etched to partially or fully remove the nitride surface layers.