Abstract: A semiconductor package structure includes an interposer substrate formed over a package substrate. The structure also includes a die disposed over the interposer substrate. The structure also includes a first heat spreader disposed over the package substrate. The structure also includes a second heat spreader disposed over the die and connected to the first heat spreader. The coefficient of thermal expansion (CTE) of the first heat spreader and the coefficient of thermal expansion of the second heat spreader are different.

Abstract: A semiconductor package structure includes an interposer substrate formed over a package substrate. The structure also includes a die disposed over the interposer substrate. The structure also includes a first heat spreader disposed over the package substrate. The structure also includes a second heat spreader disposed over the die and connected to the first heat spreader. The coefficient of thermal expansion (CTE) of the first heat spreader and the coefficient of thermal expansion of the second heat spreader are different.

Abstract: A semiconductor device includes a package structure, a first heat spreader, and a second heat spreader. The first heat spreader is aside the package structure. The second heat spreader is in physical contact with the first heat spreader. The second heat spreader covers a top surface and sidewalls of the package structure. A material of the first heat spreader is different from a material of the second heat spreader.

Abstract: A method includes bonding a first package component over a second package component. The second package component includes a plurality of dielectric layers, and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes dispensing a stress absorber on the second package component, curing the stress absorber, and forming an encapsulant on the second package component and the stress absorber.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.

Abstract: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.

Abstract: A semiconductor device includes a substrate, a package structure, a first heat spreader, and a second heat spreader. The package structure is disposed on the substrate. The first heat spreader is disposed on the substrate. The first heat spreader surrounds the package structure. The second heat spreader is disposed on the package structure. The second heat spreader is connected to the first heat spreader. A material of the first heat spreader is different from a material of the second heat spreader.