Abstract: Provided are a binder for an electrode, a negative electrode for a secondary battery including the binder, and a secondary battery, in which an active material layer is prevented from lifting from a negative electrode base material. A binder forming an electrode of a secondary battery includes a binder particle and a temperature-sensitive polymer grafted on a surface of the binder particle.

Abstract: Devices, methods and test kits for the detection of Human Immunodeficiency Virus Type (HIV) infection are disclosed. The methods comprise the use of single use, qualitative, manually performed, visually read, in vitro immunoassays for the detection of antibodies to Human Immunodeficiency Virus Type 1 (HIV-1) and Type 2 (HIV-2); the immunoassays enable distinguishing between recent and long-term infection in HIV-1 infected subjects. The assay is a point of care (POC) test intended for use with blood or serum/plasma specimens.

Abstract: An ultrasound imaging system may acquire ultrasound data from a heart. The ultrasound data may be analyzed to on-invasively provide a value for cardiac pressure, such as left ventricular end diastolic pressure (LVEDP). In some examples, the ultrasound data may be acquired from B-mode images, Doppler images, and/or strain measurements. In some examples, the ultrasound data may be acquired across an entire cardiac cycle of the heart. In some examples, the ultrasound data may include strain measurements and/or volume measurements of the left atrium. In some examples, the ultrasound data may be analyzed by a correlation algorithm, such as a partial least squares model and/or a neural network.

Abstract: The invention provides a method for assessing cardiac valve regurgitation. The method includes obtaining 4D ultrasound data of a region of interest, wherein the region of interest comprises a cardiac valve. The 4D ultrasound data comprises a time sequence of 3D ultrasound images comprising B-mode ultrasound data and color Doppler ultrasound data. Image stabilization is performed on the images of the time sequence of 3D ultrasound images and a dynamic jet is then segmented from the time sequence of stabilized 3D ultrasound images. A dynamic surface model is fit to the valve in the time sequence of stabilized 3D ultrasound images based on the segmented jet. The method further includes identifying a dynamic regurgitant orifice based on the applied surface model and the time sequence of stabilized 3D ultrasound images and fitting a flow convergence model to the time sequence of stabilized 3D ultrasound images based on the identified dynamic regurgitant orifice.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent’ activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: A method of inspecting a structure of a device and a system for doing the same is described. The method includes generating a sample image of a device having a structure to be inspected; identifying a plurality of features of the sample image; comparing the plurality of features to a corresponding plurality of features of a reference image; and locating features in the sample image that deviate from corresponding features of the reference image. The generating step includes moving the device, a detector array or both, relative to one another, wherein the detector array is configured to generate a line of data representing light reflected from the device, and assembling lines of data from the detector array to generate a sample image.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent’ activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: A three-dimensional ITO electrode and the method of fabricating the same are disclosed. The three-dimensional ITO electrode of the present invention has a conductive layer and a plurality of ITO nanorods formed on the conductive layer, wherein the length range of the ITO nanorods can vary from 10 nm to 1500 nm. The best length is about 50 nm-200 nm for organic solar cells. When applied into organic optoelectronic devices such as organic solar cells and organic light-emitting diodes (OLEDs), the three-dimensional structure of the ITO electrode may increase the contact area to the active layer, thus improving the electric current collecting efficiency and uniformity of current spreading (flowing). Also, an evaporator, a solar cell comprising the above three-dimensional ITO electrode, and the method of fabricating the solar cell are disclosed.

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract: In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract: An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and an NMOS transistor formed on the substrate, comprising a gate, a source and a drain, wherein the drain is formed in the N well and coupled to a Vcc, and the source is formed in the P deep well; and a second P+ doped region formed in the P deep well. The ESD protection circuit uses a smaller area than the conventional ESD protection circuit.

Abstract: A method of using nanoparticles to fabricate an emitting layer of an optical communication light source on a substrate is proposed, in which a host capable of reacting with unstable ions on the surface of a rare earth ions nanomaterial is used as a carrier of nanoparticles to make the rare earth ions nanomaterial release rare earth ions, thereby forming an emitting layer that can be excited by an external current or light source to emit light.

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract: In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.

Abstract: A device for connection between supply buses in mixed power integrated circuits includes a diode in series with a transistor with an active p-ring in a semiconductor substrate. The active p-ring surrounds the source and drain of the transistor with a conductive region having the same conductivity type as the semiconductor substrate. A control circuit coupled to the p-ring applies a bias voltage in response to an ESD event affecting the first and second conductors. The bias voltage tends to inject carriers into the semiconductor substrate which enables discharge of the short voltage pulse via a parasitic SCR in the substrate from the anode of the diode to the source of the transistor.

Abstract: In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.