Patents by Inventor Shin Tabata

Shin Tabata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210121988
    Abstract: A processing method for processing an SiC ingot includes a peel-off zone forming step of applying a processing pulsed laser beam having a wavelength transmittable through the ingot to the ingot while positioning a focused spot of the processing pulsed laser beam at a depth corresponding to a thickness of a wafer to be peeled off from the ingot, to form belt-shaped peel-off zones each including cracks in the ingot, a reflected beam detecting step of applying an inspecting laser beam having a wavelength transmittable through the ingot and reflectable from cracks of the peel-off zones and detecting an intensity of a beam reflected by the cracks, and a processing laser beam output power adjusting step of adjusting an output power of the processing pulsed laser beam to keep the intensity of the reflected beam detected in the reflected beam detecting step within a predetermined range.
    Type: Application
    Filed: October 8, 2020
    Publication date: April 29, 2021
    Inventors: Kazuya HIRATA, Shin TABATA
  • Patent number: 10910511
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: February 2, 2021
    Assignees: OSAKA UNIVERSITY, DISCO CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Publication number: 20190088816
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 21, 2019
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Patent number: 9530929
    Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: December 27, 2016
    Assignee: DISCO CORPORATION
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Patent number: 9511579
    Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: December 6, 2016
    Assignee: Disco Corporation
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Publication number: 20150221818
    Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
    Type: Application
    Filed: January 27, 2015
    Publication date: August 6, 2015
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Publication number: 20150202857
    Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
    Type: Application
    Filed: January 7, 2015
    Publication date: July 23, 2015
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata