Abstract: A semiconductor package may include a package substrate, a first semiconductor die electrically and mechanically coupled to the package substrate, a second semiconductor die electrically and mechanically coupled to the package substrate, and a reinforcement structure mechanically coupled to at least a first vertical surface of the first semiconductor die and a second vertical surface of the second semiconductor die, such that the reinforcement structure surrounds less than an entirety of the first semiconductor die and the second semiconductor die. The semiconductor package may include an underfill material formed between a top surface of the package substrate and bottom surfaces of the first semiconductor die and the second semiconductor die. The reinforcement structure may include a polymer material located in a space between the first semiconductor die and the second semiconductor die. The polymer material may be a polymer matrix composite having a greater modulus than the underfill material.

Abstract: An interconnect structure includes a conductive feature embedded in a dielectric feature. The conductive feature has a first horizontal portion and a first vertical portion. The first horizontal portion extends in a horizontal direction to terminate at two edge surfaces. The first horizontal portion includes graphene layers stacked on each other, and an intercalation material interposed among the graphene layers. The intercalation material includes a first atom dopant including one of a group 1 metal, a group 2 metal, a group 3 metal, a lanthanide series metal, an actinide series metal, and combinations thereof. The first vertical portion extends in a vertical direction and is in contact with one of the two edge surfaces of the first horizontal portion. The first vertical portion is made of a first electrically conductive metal material.

Abstract: An integrated circuit includes a semiconductor substrate, an interconnection structure, a first dielectric layer, conductive pads, a second dielectric layer, conductive connectors, and an anti-stress layer. The interconnection structure is disposed on the semiconductor substrate. The first dielectric layer is disposed on the interconnection structure. The conductive pads are disposed on the first dielectric layer and are electrically connected to the interconnection structure. The second dielectric layer is disposed on the first dielectric layer to laterally surround the conductive pads. The conductive connectors are disposed on and electrically connected to the conductive pads. The anti-stress layer is disposed over the conductive pads and laterally surrounds some of the conductive connectors.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.

Abstract: A device structure includes: an interposer including interposer dielectric material layers having formed therein interposer metal interconnect structures and die-side interposer bonding pads; at least one semiconductor die having formed therein in-die bonding pads that are bonded to a respective one of the die-side interposer bonding pads by metal-to-metal bonding; and a composite die frame laterally surrounding the at least one semiconductor die. The composite die frame includes a molding compound die frame portion including a molding compound material and frame edge reinforcement structures located at corners of the composite die frame and including a material having a lower coefficient of thermal expansion at 20 degrees Celsius than the molding compound material.

Abstract: A semiconductor structure includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and including a conductive interconnect; and a cap layer disposed on the interconnect structure. The cap layer includes a cap portion disposed on the conductive interconnect. The cap portion includes a plurality of two-dimensional material sheets stacked on each other and has a lower surface proximate to the conductive interconnect. The lower surface of the cap portion is formed with a plurality of dangling bonds such that the cap portion is adhered to the conductive interconnect through the dangling bonds.

Abstract: An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first dielectric layer and one or more first conductive features disposed in the first dielectric layer. The one or more first conductive features includes a first metal. The structure further includes a plurality of graphene layers disposed on each of the one or more first conductive features, the plurality of graphene layers include a second metal intercalated therebetween, and the second metal is different from the first metal.

Abstract: A computer system, remote control monitoring system, and remote control monitoring method are provided to instantly provide the local display screen of the local computer to the remote computer for remote real-time display. The remote control monitoring system is arranged in the local computer and has a signal receiver and a remote controller. The signal receiver receives the video signal from the processor, executes the signal transforming process to generate the video signal in different standards. The remote controller executes a network compressing process on the transformed video signal to generate the network transportable video data, and transmits the data to the remote computer for displaying the corresponding remote display screen on the remote computer. The present disclosure enables the implementing of the out-of-band remote displaying.

Abstract: A computer system, remote control monitoring system, and remote control monitoring method are provided to instantly provide the local display screen of the local computer to the remote computer for remote real-time display. The remote control monitoring system is arranged in the local computer and has a signal receiver and a remote controller. The signal receiver receives the video signal from the processor, executes the signal transforming process to generate the video signal in different standards. The remote controller executes a network compressing process on the transformed video signal to generate the network transportable video data, and transmits the data to the remote computer for displaying the corresponding remote display screen on the remote computer. The present disclosure enables the implementing of the out-of-band remote displaying.

Abstract: A method for playing audio files using portable electronic devices, comprising: providing a portable electronic device and a processor wirelessly communicating with the portable electronic device; building a list of audio files to be played; downloading the audio files according to the list and storing the audio files in the processor; selecting audio files in the list by the portable electronic device; and wirelessly sending the selected audio files to the portable electronic device to play.