Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.