Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A vacuum processing apparatus (110) for deposition of a material on a substrate is provided. The vacuum processing apparatus (110) includes a vacuum chamber comprising a processing area (111); a deposition apparatus (112) within the processing area (111) of the vacuum chamber; a cooling surface (113) inside the vacuum chamber; and one or more movable shields (220) between the cooling surface (113) and the processing area (111).

Abstract: A mobile communication system is disclosed. The mobile communication system includes a first communication module, wherein the first communication module includes a first global positioning device utilized for determining a coordinate of the first communication module; a first communication apparatus, coupled to the first global positioning device, for receiving a coordinate of a second communication module; a first operating interface; and a first processing circuit, coupled to the first communication apparatus and the first operating interface, for controlling the first operating interface to indicate a position of the first communication module according to the coordinate of the first communication module or controlling the first operating interface to indicate a position of the second communication module according to the coordinate of the second communication module.