Abstract: Disclosed are an apparatus for monitoring pulsed high-frequency power and a substrate processing apparatus including the same. The apparatus includes an attenuation module configured to attenuate a pulsed high-frequency power signal; a rectifier module configured to convert the pulsed high-frequency power signal into a direct current signal; and a detection module configured to detect a pulse parameter based on the direct current signal.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Abstract: Disclosed are a plasma generating unit and a substrate treating apparatus including the same. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a substrate support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a process gas into the treatment space, and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit includes an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas, and a magnetic structure including magnetic walls disposed between the plurality of antenna coils, and wherein the antenna unit includes a first antenna coil having a ring shape, and a second antenna coil disposed outside the first antenna coil and having a ring shape.

Abstract: Disclosed are an apparatus for monitoring pulsed high-frequency power and a substrate processing apparatus including the same. The apparatus includes an attenuation module configured to attenuate a pulsed high-frequency power signal; a rectifier module configured to convert the pulsed high-frequency power signal into a direct current signal; and a detection module configured to detect a pulse parameter based on the direct current signal.

Abstract: The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

Abstract: Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Abstract: Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.

Abstract: Disclosed are a plasma generating unit and a substrate treating apparatus including the same. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a substrate support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a process gas into the treatment space, and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit includes an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas, and a magnetic structure including magnetic walls disposed between the plurality of antenna coils, and wherein the antenna unit includes a first antenna coil having a ring shape, and a second antenna coil disposed outside the first antenna coil and having a ring shape.

Abstract: A substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma source configured to generate plasma from the treatment gas. The support unit includes an electrostatic chuck, on which the substrate is positioned, a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck, a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material, an insertion body disposed in the second ring and formed of a conductive material, and an impedance control unit configured to adjust an impedance of the insertion body.

Abstract: The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.

Abstract: An antenna and a substrate treating process utilizing the same are provided. The antenna may extend along an imaginary baseline having predetermined curvature and comprise a section where the distance between the baseline and intersection point between the antenna and a vertical line perpendicular to the baseline changes depending on a position on the baseline.

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

Abstract: Disclosed are an apparatus for monitoring pulsed high-frequency power and a substrate processing apparatus including the same. The apparatus includes an attenuation module configured to attenuate a pulsed high-frequency power signal; a rectifier module configured to convert the pulsed high-frequency power signal into a direct current signal; and a detection module configured to detect a pulse parameter based on the direct current signal.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.