Abstract: A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

Abstract: A hollow-cathode discharge apparatus is disclosed for plasma-based processing. The hollow-cathode discharge apparatus includes a vacuum chamber, a hollow cathode disposed in the center of the vacuum chamber, a carrier for synchronously carrying a plurality of work-pieces in the vacuum chamber and a driving element for driving the carrier.

Abstract: A plasma source is designed with a starting rod to reduce target vapor shielding. A curve ion duct has reverse thorns on its inner wall to filter macroparticles in plasma. The curve ion duct has duct segments and each duct segment has an individual electricity. The present invention increases ion amount, acquires a film through high energy ions, and obtains enhanced film adhesion and film quality.