Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. R1 represents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. R2 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms. R3 represents an alicyclic group having 4 to 20 carbon atoms or an arylene group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the arylene group represented by R3 are unsubstituted or substituted.

Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.

Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).

Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2 ??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.

Abstract: A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.