Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: A laminated structure for use as a thy film photoresist, which includes a supporting layer, a photosensitive resin layer and a protective layer. The protective layer is a polyester film that has a maximum surface roughness between 1,500 nm and 2,500 nm, and a sheet resistance between 1×108?/? and 1×1012?/?. The laminated structure is particularly applicable to the manufacture of a photosensitive device and a circuit of a printed circuit board or a lead frame.

Abstract: A laminated structure for use as a thy film photoresist, which includes a supporting layer, a photosensitive resin layer and a protective layer. The protective layer is a polyester film that has a maximum surface roughness between 1,500 nm and 2,500 nm, and a sheet resistance between 1×108 ?/? and 1×1012 ?/?. The laminated structure is particularly applicable to the manufacture of a photosensitive device and a circuit of a printed circuit board or a lead frame.