Abstract: Provided are an electroluminescent device, a method of manufacturing the same, and a display device including the same, the electroluminescent device including a first electron auxiliary layer, a first light emitting layer, and a first electrode disposed on a first surface of a transparent electrode; and a second electron auxiliary layer, a second light emitting layer, and a second electrode disposed on a second surface of the transparent electrode, wherein the first electron auxiliary layer and the second electron auxiliary layer each include a plurality of zinc oxide nanoparticles, a ratio (t1/t0) of a thickness (t1) of the first electron auxiliary layer to a thickness (t0) of the transparent electrode and a ratio (t2/t0) of a thickness (t2) of the second electron auxiliary layer to the thickness (t0) of the transparent electrode are each in the range of about 0.1 to about 4.0.

Abstract: A method for fabricating a semiconductor device, including the steps of providing a semiconductor substrate of a first conductivity type, defining a channel region and source/drain regions in the semiconductor substrate and etching the semiconductor substrate in the source/drain regions to a depth, forming an insulating film on a surface of the semiconductor substrate and a first semiconductor layer on the insulating film, etching the first semiconductor layer and the insulating film to expose the semiconductor substrate in the channel region, forming a second semiconductor layer on an entire surface of the semiconductor substrate and the first semiconductor layer, forming a gate insulating film on the second semiconductor layer, forming a gate electrode on the gate insulating film over the channel region, and forming impurity regions of a second conductivity type in the first and second semiconductor layers on both sides of the gate electrode.