Abstract: A light-emitting element includes: a light-reflective first electrode; a light-emitting layer above the first electrode; a light-transmissive second electrode above the light-emitting layer; a first light-transmissive layer on the second electrode; and a second light-transmissive layer on the first layer. First optical cavity structure is formed between surface of the first electrode facing the light-emitting layer and surface of the second electrode facing the light-emitting layer. The first optical cavity structure corresponds to, as peak wavelength, first wavelength longer than peak wavelength of light emitted from the light-emitting layer. Second optical cavity structure is formed between the surface of the first electrode facing the light-emitting layer and an interface between the first layer and the second layer. The second optical cavity structure corresponds to, as peak wavelength, second wavelength shorter than the first wavelength.

Abstract: An organic electroluminescent device includes, in order, a first electrode, a light-emitting layer, a resistive layer, and a second electrode. The resistive layer has a specific resistance within a range of 1×104 ?·cm or greater and 5×106 ?·m or less and includes a mixed material including two or more of zinc oxide, gallium oxide, and silicon dioxide and having a composition ratio within a predetermined range.

Abstract: A light-emitting element includes: a light-reflective first electrode; a light-emitting layer above the first electrode; a light-transmissive second electrode above the light-emitting layer; a first light-transmissive layer on the second electrode; and a second light-transmissive layer on the first layer. First optical cavity structure is formed between surface of the first electrode facing the light-emitting layer and surface of the second electrode facing the light-emitting layer. The first optical cavity structure corresponds to, as peak wavelength, first wavelength longer than peak wavelength of light emitted from the light-emitting layer. Second optical cavity structure is formed between the surface of the first electrode facing the light-emitting layer and an interface between the first layer and the second layer. The second optical cavity structure corresponds to, as peak wavelength, second wavelength shorter than the first wavelength.

Abstract: An organic electroluminescent element includes, in order, a first electrode, an organic layer that includes an organic electroluminescent layer, an interface adjustment layer, a resistive layer, and a second electrode. The resistive layer has a specific resistance higher than a specific resistance of the second electrode. The interface adjustment layer has a specific resistance higher than the specific resistance of the second electrode and lower than the specific resistance of the resistive layer.

Abstract: An organic electroluminescent device includes, in order, a first electrode, a light-emitting layer, a resistive layer, and a second electrode. The resistive layer has a specific resistance within a range of 1×104?·cm or greater and 5×106?·m or less and includes a mixed material including two or more of zinc oxide, gallium oxide, and silicon dioxide and having a composition ratio within a predetermined range.

Abstract: An organic electroluminescent element includes, in order, a first electrode, an organic layer that includes an organic electroluminescent layer, an interface adjustment layer, a resistive layer, and a second electrode. The resistive layer has a specific resistance higher than a specific resistance of the second electrode. The interface adjustment layer has a specific resistance higher than the specific resistance of the second electrode and lower than the specific resistance of the resistive layer.

Abstract: A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.

Abstract: Disclosed is an optical element including a first electrode and a second electrode disposed to face each other; an insulating film covering a surface of the first electrode facing the second electrode, the insulating film including a dielectric layer, an ion barrier layer, and a water repellent layer laminated in order; and a polar liquid and a non-polar liquid enclosed between the insulating film and the second electrode and having refractive indices different from each other. The dielectric layer has a larger permittivity than that of the ion barrier layer, the ion barrier layer suppresses permeation of an ion contained in the polar liquid, and the water repellent layer is located in an uppermost layer of the insulating film and exhibits an affinity for the non-polar liquid.

Abstract: A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.

Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

Abstract: An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible.

Abstract: A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.

Abstract: An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible.

Abstract: A method of producing a transparent multilayer film which enables to easily deposit a transparent multilayer film without changing a target material is provided, and a transparent multilayer film formed by the method of producing a transparent multilayer film and a liquid lens including the transparent multilayer film are provided. A transparent conductive film is deposited on a base by sputtering a target 3 made of ZnO containing any of Al2O3, Ga2O3, and SiO2 using a sputtering gas without a reactive gas being present or in the presence of a reactive gas, and a transparent insulating film is then deposited on the transparent conductive film by sputtering the target using a sputtering gas in the presence of a reactive gas, thereby forming a transparent multilayer film.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Abstract: A method for producing a transparent insulating film includes a step of forming a transparent insulating film on a substrate by sputtering using a zinc-aluminum alloy target containing 50% to 90% by weight zinc and 10% to 50% byt weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas.