Abstract: A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

Abstract: Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.

Abstract: A nanostructure including a metal core, a metal shell surrounding the metal core, and a dielectric layer disposed between the metal core and the metal shell and including a quantum dot, a composite including the nanostructure, a display panel including the composite, and an electronic device including the display panel.

Abstract: Provided are an electroluminescent device, a method of manufacturing the same, and a display device including the same, the electroluminescent device including a first electron auxiliary layer, a first light emitting layer, and a first electrode disposed on a first surface of a transparent electrode; and a second electron auxiliary layer, a second light emitting layer, and a second electrode disposed on a second surface of the transparent electrode, wherein the first electron auxiliary layer and the second electron auxiliary layer each include a plurality of zinc oxide nanoparticles, a ratio (t1/t0) of a thickness (t1) of the first electron auxiliary layer to a thickness (t0) of the transparent electrode and a ratio (t2/t0) of a thickness (t2) of the second electron auxiliary layer to the thickness (t0) of the transparent electrode are each in the range of about 0.1 to about 4.0.

Abstract: An electronic device includes a light emitting element having a width of less than or equal to about 20 micrometers (?m), a quantum dot color filter overlapping the light emitting element, and a photo-detecting unit which detects a first light emitted from the quantum dot color filter.

Abstract: A display panel, a method of manufacturing the same, and an electronic device including the display panel. The display panel includes a light emitting device array including a plurality of light emitting devices, a color conversion layer disposed on the light emitting device array and converting the emission spectrum of light emitted from the light emitting device array, and an encapsulation film on the color conversion layer, wherein the color conversion layer includes a quantum dot-polymer pattern including a quantum dot-polymer composite, an average roughness (Ra) of an upper surface of the quantum dot-polymer pattern is less than or equal to about 3% of a thickness of the encapsulation film.

Abstract: An apparatus for accelerated multi-stage synthesis of quantum dots (QDs) includes an injector which injects a material for producing QDs, a first reactor connected to the injector and including at least one selected from a coil reactor and a plate reactor, a second reactor connected to the first reactor and including at least one selected from the coil reactor and the plate reactor, and a first junction connected between the first reactor and the second reactor and provided with an inlet for injecting the material for producing the QDs.

Abstract: A quantum dot composite configured to emit green light or red light. The quantum dot composite including a polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, the plurality of quantum dots include a semiconductor nanocrystal core comprising indium and phosphorus. As determined by differential scanning calorimetry, the quantum dot composite exhibits an intensity of a peak between about 350° C. to about 450° C. that is about 8 times or more and about 13 times or less relative to an intensity of a peak between about 200° C. and about 300° C. in a thermogravimetric analysis graph.

Abstract: The present disclosure provides a display panel including: a substrate; a plurality of light emitting elements including semiconductor light emitting chips and disposed on the substrate; a plurality of color conversion layers overlapped with the plurality of light emitting elements and disposed thereon, respectively; and a plurality of absorption-type color filter layers directly disposed and having a surface shape of the plurality of color conversion layers, respectively, where a pitch between adjacent light emitting elements of the plurality of light emitting elements is less than or equal to about 100 micrometers, and at least one of the plurality of color conversion layers includes quantum dots.

Abstract: An electroluminescent device that includes a first electrode and a second electrode spaced apart from each other, a light emitting layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the light emitting layer and the second electrode, and an organic layer disposed on the electron transport layer. The light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes a plurality of metal oxide nanoparticles, and the organic layer includes a polymeric acid compound.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal, wherein the quantum dot includes a metal including indium and zinc, and a non-metal including phosphorus and sulfur, does not include cadmium, and has an optical density (OD) of about 0.4 to about 0.6 per 1 milligrams (mg) of the quantum dot for a wavelength of 450 nanometers (nm) and an emission peak wavelength of greater than or equal to about 500 nm and less than or equal to about 550 nm, and a volume of the core of greater than or equal to about 15% and less than or equal to about 50%, based on a total volume of the quantum dot.

Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal.

Abstract: A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

Abstract: An ink composition and luminescent nanostructure composite, and an electronic device including the luminescent nanostructure composite. The ink composition includes a plurality of titanium oxide particles, a plurality of luminescent nanostructures (e.g., quantum dots), a monomer including a carbon-carbon unsaturated bond, and optionally an organic solvent. The titanium oxide particles have an average size of greater than or equal to about 10 nm and less than or equal to about 900 nm, and the titanium oxide particles comprise an organosilane compound. The ink composition has a total solid content (TSC) of greater than or equal to about 90 wt %, and an amount of the titanium oxide particles in the ink composition is greater than or equal to about 1 wt % based on the total weight of the ink composition. The ink composition is configured to emit a first light.

Abstract: A display panel and an electronic device including the display panel are provided, where the display panel includes a quantum dot composite including a matrix and a plurality of quantum dots and titanium dioxide (TiO2) particles dispersed in the matrix, the plurality of quantum dots include silver and gallium, exhibit an emission peak wavelength of from about 500 nm to about 550 nm, and a full width at half maximum of the emission peak is greater than or equal to about 10 nm and less than or equal to about 50 nm, and where the quantum dot composite has a mole ratio of silver to titanium of greater than or equal to about 0.4:1 and less than or equal to about 15:1, and a mole ratio of gallium to titanium of greater than or equal to about 0.4:1 and less than or equal to about 20:1.

Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

Abstract: A luminescent nanostructure, a production method for making the luminescent nanostructure, and an electronic device including the luminescent nanostructure. The luminescent nanostructure includes a semiconductor nanocrystal including a Group 13 metal nitride. The luminescent nanostructure has an aspect ratio of greater than or equal to about 1, and an organic compound having an M-O moiety, wherein M is Ti, Al, Zr, Sn, or Si that is bound to at least a portion of the surface of the luminescent nanostructure.

Abstract: An electroluminescence device includes an anode and a cathode opposite to each other, a light emitting layer between the anode and the cathode, an electron transport layer between the light emitting layer and the cathode, and a continuous metal or non-metal oxide film on the electron transport layer, where the light emitting layer includes a plurality of semiconductor nanoparticles, and the electron transport layer includes Group IIA metal-containing zinc oxide nanoparticles. In the electroluminescence device, the continuous metal or non-metal oxide film is produced by alternately depositing metal or non-metal precursors and water on the electron transport layer using an atomic layer deposition (ALD) method.

Abstract: A quantum dot including a Group IIIA element and a Group VA element of the periodic table of elements, wherein the quantum dot has an absorption peak wavelength of greater than or equal to about 1,000 nm in a visible-infrared (Vis-IR) absorption spectrum, and includes a ligand derived from an aliphatic hydrocarbon compound substituted with a hydroxyl group (—OH) and a thiol group (—SH) on its surface, a method for preparing the quantum dot, and an electronic device including the quantum dot.

Abstract: A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.