Abstract: A yield of semiconductor devices having a magnetic shield is enhanced. A magnetic shield member SIE has a first shield member SIE1 and a second shield member SIE2. The first shield member SIE1 has a first facing region FP1 facing a first surface of a semiconductor chip SC. The second shield member SIE2 has a second facing region FP2 facing a second surface of the semiconductor chip SC. A resin layer RL1 has a portion thereof making contact with the first shield member SIE1, and has another portion thereof making contact with the second shield member SIE2. Then, the first shield member SIE1 and the second shield member SIE2 are magnetically coupled via the resin layer RL1 or directly. The first shield member SIE1 and the second shield member SIE2 cover a magnetic memory cell MR in plan view.