Patents by Inventor Shincheol Min

Shincheol Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 10192823
    Abstract: In a semiconductor device and a method of manufacturing the same a fuse structure may be formed during formation of first to third contact plugs connected to a transistor. The fuse structure may include first and second fuse contact plugs having the same height as the first and second contact plugs, and a connection pattern having the same height as the third contact plug. The connection pattern may be connected between the first and second fuse contact plugs.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: January 29, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jihoon Yoon, Shincheol Min, Hyun-Min Choi
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20170069570
    Abstract: In a semiconductor device and a method of manufacturing the same a fuse structure may be formed during formation of first to third contact plugs connected to a transistor. The fuse structure may include first and second fuse contact plugs having the same height as the first and second contact plugs, and a connection pattern having the same height as the third contact plug. The connection pattern may be connected between the first and second fuse contact plugs.
    Type: Application
    Filed: August 5, 2016
    Publication date: March 9, 2017
    Inventors: Jihoon Yoon, Shincheol Min, Hyun-Min Choi
  • Method of fabricating fin-field effect transistors (finFETs) having different fin widths
    Patent number: 9443935
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: September 13, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee
  • Method of Fabricating Fin-Field Effect Transistors (FINFETS) Having Different Fin Widths
    Publication number: 20160155804
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Application
    Filed: February 2, 2016
    Publication date: June 2, 2016
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee
  • Method of fabricating fin-field effect transistors (finFETs) having different fin widths
    Patent number: 9287402
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 15, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee
  • Method of Fabricating FIN-Field Effect Transistors (FINFETS) Having Different FIN Widths
    Publication number: 20150162437
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee
  • Method of fabricating fin-field effect transistors (finfets) having different fin widths
    Patent number: 8987100
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee
  • METHOD OF FABRICATING FIN-FIELD EFFECT TRANSISTORS (FINFETS) HAVING DIFFERENT FIN WIDTHS
    Publication number: 20130244392
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Application
    Filed: February 28, 2013
    Publication date: September 19, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chang Woo OH, Shincheol Min, Jongwook Lee, Choongho Lee