Abstract: A memory system for use in a system-in-package device (SiP) is disclosed. The memory system includes two cache memories. The first cache memory is on a first die of the SiP and the second cache memory is on a second die of the SiP. Both cache memories include tag random access memories (RAMs) corresponding to data stored in the corresponding cache memories. The second cache memory is of a different cache level from the first cache memories. Also, the first cache memory is on a first die of the SiP, and the second cache memory includes a first portion on the first die of the SiP, and a second portion on a second die of the SiP. Both cache memories can be checked concurrently for data availability by a single physical address.

Abstract: Embodiments of the present invention relate to continuous, roll-to-roll methods of manufacturing dry adhesive products. A method for producing a dry adhesive product includes providing a fiber-forming composition to a fiber-forming means; passing a backing material having a first surface and a second surface along a first roller to thereby advance the backing material to the fiber-forming means; allowing the fiber-forming means to form a dry adhesive layer made from the fiber-forming composition on the first surface of the backing material; and passing the backing material having the dry adhesive layer thereon along a second roller.

Abstract: A memory system for use in a system-in-package device (SiP) is disclosed. The memory system includes two cache memories. The first cache memory is on a first die of the SiP and the second cache memory is on a second die of the SiP. Both cache memories include tag random access memories (RAMs) corresponding to data stored in the corresponding cache memories. The second cache memory is of a different cache level from the first cache memories. Also, the first cache memory is on a first die of the SiP, and the second cache memory includes a first portion on the first die of the SiP, and a second portion on a second die of the SiP. Both cache memories can be checked concurrently for data availability by a single physical address.

Abstract: In various embodiments, the fuse is formed from silicide and on top of a fin of a fin structure. Because the fuse is formed on top of a fin, its width takes the width of the fin, which is very thin. Depending on implementations, the fuse is also formed using planar technology and includes a thin width. Because the width of the fuse is relatively thin, a predetermined current can reliably cause the fuse to be opened. Further, the fuse can be used with a transistor to form a memory cell used in memory arrays, and the transistor utilizes FinFET technology.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract: A method of forming a semiconductor device is provided. The method includes forming a first fin above a substrate, forming a first emitter region in a first portion of the first fin, forming a first collector region in a second portion of the first fin, and forming a first base region in a third portion of the first fin. The third portion of the first fin is disposed underneath a first gate electrode. The method further includes forming a second fin adjacent to the first fin and above the substrate. The second fin is composed of a semiconductor material. The method also includes forming a first base contact over the second fin. The first base contact is coupled to the first base region through the second fin, the substrate, and the first fin.

Abstract: A method for programming a multi-level electrical fuse system comprises providing a fuse box with an electrical fuse and providing one of at least two fuse writing voltages to the electrical fuse to program the electrical fuse to one of at least two resistance states. The fuse box comprises at least one electrical fuse, a programming device serially coupled to the electrical fuse, and a variable power supply coupled to the fuse box and configured to generate two or more voltage levels.

Abstract: An edge triggered flip-flop circuit is disclosed with a clock signal, an input signal, a switch module using the clock signal for defining a data passing window, and a latch module for receiving the input signal during the data passing window.

Abstract: A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

Abstract: An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light.

Abstract: The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector. An extrinsic base is formed on the substrate with a predetermined distance from either the emitter or the collector, wherein the base, the emitter, the collector and the gate terminal are located in an active area defined by a hole in a surrounding isolation structure in the substrate.

Abstract: An integrated circuit device includes a semiconductor substrate having a top surface; at least one insulation region extending from the top surface into the semiconductor substrate; a plurality of base contacts of a first conductivity type electrically interconnected to each other; and a plurality of emitters and a plurality of collectors of a second conductivity type opposite the first conductivity type. Each of the plurality of emitters, the plurality of collectors, and the plurality of base contacts is laterally spaced apart from each other by the at least one insulation region. The integrated circuit device further includes a buried layer of the second conductivity type in the semiconductor substrate, wherein the buried layer has an upper surface adjoining bottom surfaces of the plurality of collectors.

Abstract: An integrated circuit that is capable of converting an analog signal to at least one digital signal is provided. The integrated circuit includes a first input end capable of receiving a first analog signal. A first set of 2n-1 inverters are capable of quantizing the first analog signal and outputting a first set of 2n-1 digital values. Each of the first set of 2n-1 digital values is either 0 or 1. A first adder is coupled with the first set of 2n-1 inverters. The first adder is capable of summing the first set of 2n-1 digital values, outputting a first integer value that is capable of corresponding to at least one digital signal.

Abstract: A split gate memory cell. First and second well regions of respectively first and second conductivity types are formed in the substrate. A floating gate is disposed on a junction of the first and second well regions and insulated from the substrate. A control gate is disposed over the sidewall of the floating gate and insulated from the substrate and the floating gate and partially extends to the upper surface of the floating gate. A doping region of the first conductivity type is formed in the second well region. The first well region and the doping region respectively serve as source and drain regions of the split gate memory cell.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract: A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.

Abstract: A method of forming a semiconductor device is provided. The method includes forming a first fin above a substrate, forming a first emitter region in a first portion of the first fin, forming a first collector region in a second portion of the first fin, and forming a first base region in a third portion of the first fin. The third portion of the first fin is disposed underneath a first gate electrode. The method further includes forming a second fin adjacent to the first fin and above the substrate. The second fin is composed of a semiconductor material. The method also includes forming a first base contact over the second fin. The first base contact is coupled to the first base region through the second fin, the substrate, and the first fin.

Abstract: A method for programming a multi-level electrical fuse system comprises providing a fuse box with an electrical fuse and providing one of at least two fuse writing voltages to the electrical fuse to program the electrical fuse to one of at least two resistance states. The fuse box comprises at least one electrical fuse, a programming device serially coupled to the electrical fuse, and a variable power supply coupled to the fuse box and configured to generate two or more voltage levels.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

Abstract: Design and methods for fabricating bipolar junction transistors are described. In one embodiment, a semiconductor device includes a first fin comprising a first emitter region, a first base region, and a first collector region. The first emitter region, the first base region, and the first collector region form a bipolar junction transistor. A second fin is disposed adjacent and parallel to the first fin. The second fin includes a first contact to the first base region.