Patents by Inventor Shing-Ann Lo

Shing-Ann Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming dielectric layer
    Patent number: 7648921
    Abstract: A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: January 19, 2010
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Hsu-Sheng Yu, Shing-Ann Lo, Ta-Hung Yang
  • METHOD OF FORMING DIELECTRIC LAYER
    Publication number: 20080124940
    Abstract: A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
    Type: Application
    Filed: September 22, 2006
    Publication date: May 29, 2008
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Hsu-Sheng Yu, Shing-Ann Lo, Ta-Hung Yang