Patents by Inventor Shing-Ann Luo

Shing-Ann Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlling the properties of DARC and manufacturing DARC
    Patent number: 7144824
    Abstract: A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: December 5, 2006
    Assignee: Macronix International Co. Ltd.
    Inventors: Shing-Ann Luo, Chien-Hung Lu, Chin-Ta Su
  • Method for improving SOG process
    Publication number: 20060237802
    Abstract: A method for forming a memory device includes providing a substrate, providing a plurality of features on the substrate, and forming a silicon-rich dielectric layer over the features. An inter-layer dielectric (ILD) or inter-metal dielectric (IMD) layer may be formed by a spin-on-glass (SOG) process on the silicon-rich dielectric layer, the silicon-rich dielectric layer preventing diffusion of a solvent used in the SOG process.
    Type: Application
    Filed: April 21, 2005
    Publication date: October 26, 2006
    Inventors: Lee-Jen Chen, Chin-Ta Su, Kuang-Wen Liu, Chien-Hung Lu, Shing-Ann Luo
  • Method for controlling the properties of DARC and manufacturing DARC
    Publication number: 20060115991
    Abstract: A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.
    Type: Application
    Filed: December 1, 2004
    Publication date: June 1, 2006
    Inventors: Shing-Ann Luo, Chien-Hung Lu, Chin-Ta Su