Patents by Inventor Shing-Chuang Pan

Shing-Chuang Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Refractory metal nitride barrier layer with gradient nitrogen concentration
    Patent number: 6876082
    Abstract: Within a microelectronic fabrication and a method for fabricating the microelectronic fabrication a barrier layer is formed over a substrate. Within the method and the microelectronic fabrication the barrier layer is formed of a refractory metal nitride barrier material having within its thickness a gradient in nitrogen concentration. The barrier layer has low resistivity and improved electromigration performance.
    Type: Grant
    Filed: August 8, 2002
    Date of Patent: April 5, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Ming Lee, Shing-Chuang Pan, Chung-Shi Liu, Chen-Hua Yu