Abstract: A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.

Abstract: A method of fabricating a light emitting device, comprising: providing a substrate; forming an undoped semiconductor layer on the substrate; forming a patterned metal layer on the undoped semiconductor layer; using the patterned metal layer as a mask to etch the undoped semiconductor layer and forming a plurality of nanorods on the substrate; and forming an light emitting stack on the plurality of nanorods to form a plurality of voids between the light emitting stack and the plurality of nanorods.

Abstract: A solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.

Abstract: A solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.

Abstract: A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.

Abstract: A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength ?0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/?0, ranging from 0.25 to 0.70.

Abstract: A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength ?0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/?0, ranging from 0.25 to 0.70.

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Abstract: To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.

Abstract: A laser system which produces multiline emissions simultaneously and which is adapted for use in optical data processing systems. In particular, in a first embodiment, a unitary positive column laser comprises two sections, the first section comprising a positive column helium-cadmium laser, the second section comprising a positive column helium-neon laser, the first and second sections being in tandem. Each section may be excited separately such that optimum excitation for red laser light, produced by the helium-neon section, and blue laser light, produced by the helium-cadmium section, can be independently controlled. The present system also allows separate cadmium vapor pressure control by separately controlling the vaporization temperature of the cadmium and also allows confinement of the cadmium vapor whereby the vapor does not contaminate one of the optical windows which confines the active laser medium.

Abstract: A radiation emission device characterized by a cylindrical cathode enclosed by an elongated envelope having a body section and two end sections is disclosed. The device includes an anode terminal, coupled to the body section, which serves to provide electrical energy to excite metallic material inside the envelope. The device further includes a pair of cataphoresis terminals located along each end section to prevent the excited metallic material from drifting into contact with radiation transmission windows located at the terminus of each end section.

Abstract: A laser structure for generating white laser light when energized by a source of dc voltage. The laser tube structure comprises a gas-filled envelope having a longitudinal axis, an anode electrode forming a portion of the envelope. A hollow cathode is positioned within the envelope and coaxially disposed with respect to the anode electrode portion of the envelope. Members are coaxially aligned with the ends of the envelope such that a structure is provided for confining a gaseous medium therein, a dc voltage applied between the cathode and anode electrode creating a discharge therebetween, the discharge stimulating continuous wave laser emission along the longitudinal axis of the cathode, the laser emission comprising simultaneous multi-line emissions in the form of white light.