Patents by Inventor Shing-Hsiang Hung

Shing-Hsiang Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ pre-PECVD oxide deposition process for treating SOG
    Patent number: 5861345
    Abstract: An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of:(1) forming an SOG layer on an uneven semiconductor surface,(2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and(3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber.The operating parameters for performing the in situ treatment are as follows:______________________________________ Gas: N.sub.2 O or C.sub.2 F.sub.6 Pressure: 4-6 Torr Temperature: 300-400.degree. C. Power: 200-400 Watts Gap: 300-800 mil Flow: 500-1500 sccm Time: 5-15 sec ______________________________________Thus, the treatment can be performed in the same PECVD chamber used to form a PECVD oxide layer on the treated SOG layer.Furthermore, the SOG layer surface may be oxidized to produce an organic deficient SiO.sub.x layer at the surface of the SOG layer prior to performing the treatment step (2).
    Type: Grant
    Filed: September 8, 1997
    Date of Patent: January 19, 1999
    Inventors: Chin-hao Chou, Yu-Chen Yang, Shing-Hsiang Hung