Abstract: A method for forming an inductor in a semiconductor substrate having a trench therein including the steps of forming a first metal portion in the trench, providing a flowable dielectric material in the trench, depositing a layer of dielectric material over the layer of first metal portion and flowable dielectric material, forming a plug in the layer of dielectric material wherein the plug is in electrical contact with the first metal portion, and forming a second metal portion over the layer of dielectric material wherein the second metal portion is in electrical contact with the plug.

Abstract: A method for preventing bonding pads from peeling caused by plug process comprises the following steps. First, a substrate is prepared, and then a first conductor is formed on the substrate. Next, a dielectric layer is formed on the first conductor. After that, a big contact window and a plurality of small contact windows are formed on the dielectric layer, wherein the plurality of small contact windows are located around the big window, and the sizes of the big contact window and small contact windows are over 3 .mu.m. Subsequently, a metal plug layer is formed on the dielectric layer, big contact window and small contact windows. Thereafter, the metal plug layer is etched back to form metal spacers on the sidewalls of the big contact window and small contact windows. Finally, a second conductor is formed on the dielectric layer, big contact window, small contact windows and metal spacers.

Abstract: A method of fabricating a IC electrical plug, which removes an overhang to prevent formation of voids inside the plug. A transistor with a gate and source/drain terminals is formed on a silicon substrate. A dielectric layer is formed above the silicon substrate. A portion of the dielectric layer is removed by etching to form a contact window, exposing the source region, the drain region, or another conductive material region. A first diffusion barrier layer is formed at the bottom and on the sidewalls of the contact window, and on the top surface of the dielectric layer, overhanging the contact window. A photoresist layer is coated over the substrate filling up the contact window and covering the surface of first diffusion barrier layer.