Abstract: [PROBLEM] There is provided a broadband infrared light emitting device that radiates infrared light having a band broader than a conventional broadband infrared light emitting device.

Abstract: [PROBLEM] There is provided a broadband infrared light emitting device that radiates infrared light having a band broader than a conventional broadband infrared light emitting device.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element, and a sealing material sealing the semiconductor light-emitting element. The sealing material includes a phosphor which includes a matrix including a glass and a luminescence center included in the matrix. A refractive index of the matrix is more in a far side of the matrix than the refractive index of the matrix in a near side of the matrix, the far side being located farther from the semiconductor light-emitting element than the near side. The refractive index of the matrix is the same as a refractive index of the semiconductor light-emitting element.

Abstract: [Problem] A semiconductor light-emitting device, which does not suffer from color unevenness of the light taken out of a sealing material even when a phosphor is used therein and enables reduction of the production cost is provided. [Means for Solving] Because semiconductor light-emitting device (1) comprises a semiconductor light-emitting element (4) and a phosphor (5) sealing the semiconductor light-emitting element (4) and having a matrix composed of a glass and a luminescence center contained in the matrix, by directly sealing the semiconductor light-emitting element (4) with the phosphor (5), color unevenness of light emitted from the device is reduced and any sealing material other than the phosphor (5) becomes unnecessary. Since a process of mixing the phosphor (5) and any other sealing material is not required, the production cost can be reduced.