Abstract: Provided is a technique capable of more accurately determining a solder protruding defect in an appearance inspection device that acquires an image of an inspection region of an inspection target and measures a height of a predetermined place in the inspection region with a height measurement device. The appearance inspection device includes: an imaging unit (3); a height measurement unit (20); a moving mechanism (5) that moves the imaging unit (3) and the height measurement unit (20). When a restricted region (M) in the inspection target is irradiated with the measurement light emitted from the height measurement unit (20), the determination unit restricts defect determination based on the information on the height of the predetermined place measured by the height measurement unit (20).

Abstract: A magnetic resonance member 1 includes a crystal structure and is capable of electron spin quantum operations with microwaves of different frequencies corresponding to arrangement orientations of a vacancy and an impurity in a crystal lattice. A magnetic field transmission unit 4 senses a measurement target magnetic field at plural measurement positions different from each other, and applies application magnetic fields corresponding to the measurement target magnetic field sensed at the plural measurement positions to the magnetic resonance member 1 along respective different directions corresponding to the aforementioned arrangement orientations. A measurement control unit 21 controls a high frequency power supply 12, and determines detection values detected by a detecting device (an irradiating device 5 and a light receiving device 6) of the physical phenomena corresponding to the plural measurement positions.

Abstract: Flaky alumina particles including mullite in a surface layer of the flaky alumina particles. A method for producing flaky alumina particles including forming a mixture by mixing together an aluminum compound that contains elemental aluminum, a molybdenum compound that contains elemental molybdenum, and silicon or a silicon compound that contains elemental silicon, the aluminum compound being in an amount greater than or equal to 50 mass %, calculated as Al2O3, the molybdenum compound being in an amount less than or equal to 40 mass %, calculated as MoO3, the silicon or the silicon compound being in an amount of 0.5 mass % or greater and less than 10 mass %, calculated as SiO2, relative to a total mass of the flaky alumina particles taken as 100 mass %; and firing the mixture.

Abstract: A silicon carbide semiconductor device has a first semiconductor region of a first conductivity type, provided in a semiconductor substrate, spanning an active region and a termination region. A second semiconductor region of a second conductivity type is provided between a first main surface and the first semiconductor region, in the active region. A device structure having a first pn junction is provided between the first and second semiconductor regions. An outer peripheral portion of the active region is provided between the first main surface and the first semiconductor region in the active region, and constitutes a second-conductivity-type outer peripheral region that surrounds a periphery of the device structure and forms a second pn junction with the first semiconductor region. A first protective film is provided on the first main surface. The first protective film blocks light generated by a forward current passing through the first and second pn junctions.

Abstract: A work supporting apparatus according to the present invention acquires, from a work terminal, an update date and time of a data file on the work terminal and a position on the data file currently displayed by the work terminal, and specifies an updated portion of the data file updated on the work terminal, based on the acquired update date and time and the acquired position on the data file.

Abstract: Provided is a work record extraction device that can correctly select a drawing element corresponding to handwriting even if there is a handwriting deviation when position coordinates are collated between handwritten data overwritten on drawing data by manual input and a drawing element on the drawing data. The work record extraction device according to the invention sets, around a drawing element, a boundary area including at least a part of the drawing element, determines whether handwritten data passes through at least a part of the boundary area, and determines that the handwritten data passes through the drawing element in a case where the handwritten data passes through at least a part of the boundary area.

Abstract: A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor layer provided on a first surface of the semiconductor substrate, a second semiconductor layer provided on a first surface of the first semiconductor layer, a third semiconductor layer provided on a first surface of the second semiconductor layer, a fourth semiconductor layer provided on a first surface of the third semiconductor layer, a plurality of first semiconductor regions of selectively provided in the fourth semiconductor layer at a first surface thereof, a gate electrode provided via a gate insulating film in the fourth semiconductor layer, between the first semiconductor regions and the third semiconductor layer, a first electrode provided on the first surface of the fourth semiconductor layer and surfaces of the first semiconductor regions, and a second electrode provided on a second surface of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, first base regions of a second conductivity type, second base regions of the second conductivity type, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an interlayer insulating film, first electrodes, a second electrode, and trenches. Between adjacent first base regions, at least two of the trenches, at least two of the gate electrodes, and at least two of the second base regions are disposed, the second base regions disposed between the adjacent first base regions being disposed separate from one another and separate from the first base regions, in a direction in which the trenches are arranged.

Abstract: Provided are a measurement method, and a measurement device that enable measuring a deviation amount in an arrangement angle of a camera, with respect to a reference direction of a shaft of the camera, and that enable correcting a deviation in the arrangement angle at low cost with high accuracy. The measurement method includes: an imaging step of imaging a target object, provided with a reference mark configured to identify a slope-known straight line, a plurality of times in different visual fields; an image processing step of obtaining the straight line identified based on the reference mark where a plurality of the straight lines corresponds to a plurality of the reference marks in images imaged in the different visual fields, respectively; and a calculating step of calculating a rotation angle, as the deviation amount in the arrangement angle, with which a distance between the straight lines becomes zero.

Abstract: The purpose of the present invention is to provide an electret fiber sheet that has high collection performance and that is suitably used in an air filter, etc. The present invention is an electret fiber sheet configured from polyolefin-based resin fibers comprising a polyolefin-based resin composition containing a high-crystalline polyolefin resin and a low-crystalline polyolefin resin, wherein the mass ratio of the low-crystalline polyolefin resin in the polyolefin-based resin composition is 0.5-10 mass % (inclusive) relative to the total mass of the high-crystalline polyolefin-based resin and the low-crystalline polyolefin resin, and a hindered-amine-based compound is included in the electret fiber sheet in an amount of 0.1-5.0 mass % (inclusive).

Abstract: A work support device according to the invention detects circuit symbols and conducting wires from circuit drawing data that does not have information unique to a circuit part, and by matching the detection result with a result of tracing a conduction path by handwriting by a worker, the circuit part and the conducting wire through which the conduction path passes are specified.

Abstract: A position measurement method is used by a device including an imaging unit and a position detector that detects a position of the imaging unit to measure, using a detection value at imaging of a measurement point, position coordinates of the measurement point. The method for correcting the detection value from the position detector includes obtaining, with the device, position coordinates of predetermined indices (22) arranged two-dimensionally on a calibration plate (20) as an actual measurement value, obtaining, as a correction value, a difference between the actual measurement value and a true value resulting from transformation of position coordinates of the indices (22) with respect to a reference point on the calibration plate (20), and correcting the detection value from the position detector (8, 9, 10). The imaging unit (3) images measurement points (P) on the measurement target (3) to measure position coordinates of the measurement points (P).

Abstract: A silicon carbide semiconductor device has a termination region, which includes first to fourth semiconductor regions, one provided on the outer side of another. The second semiconductor region has first small regions that are provided in a region having an impurity concentration lower than that of the first semiconductor region, and have the same impurity concentration as first semiconductor region. The third semiconductor region has a lower impurity concentration than the first semiconductor region. The fourth semiconductor region has second small regions that have the same impurity concentration as the third semiconductor region. A width of the first semiconductor region is narrower than a width of the third semiconductor region.

Abstract: The present invention has been made in view of the above problems, and an object thereof is to provide a charged particle beam device capable of improving the reproducibility of the magnetic field response of a magnetic field lens and realizing highly-accurate electron orbit control in a short time. A charged particle beam device according to the present invention generates an excitation current of a magnetic field lens by combining a direct current with an alternating current (see FIG. 6A).

Abstract: A charged particle optical system includes an aberration corrector 209 that corrects aberration of a charged particle beam and has multipoles of a plurality of stages. The aberration corrector generates a plurality of multipole fields in a superimposed manner for each of the multipoles of the plurality of stages in order to correct the aberration of the charged particle beam. In order to reduce the influence of a parasitic field due to distortion of the multipole, for a first multipole field to be generated in a multipole of any stage among the plurality of stages, a value of a predetermined correction voltage or correction current to be applied to a plurality of poles for generating the first multipole field is corrected so as to eliminate movement of an observation image obtained based on electrons detected from a detector 215 by irradiating a sample with the charged particle beam before and after the first multipole field is generated.

Abstract: A position measurement method is used by a device including an imaging unit and a position detector that detects a position of the imaging unit to measure, using a detection value at imaging of a measurement point, position coordinates of the measurement point. The method for correcting the detection value from the position detector includes obtaining, with the device, position coordinates of predetermined indices (22) arranged two-dimensionally on a calibration plate (20) as an actual measurement value, obtaining, as a correction value, a difference between the actual measurement value and a true value resulting from transformation of position coordinates of the indices (22) with respect to a reference point on the calibration plate (20), and correcting the detection value from the position detector (8, 9, 10). The imaging unit (3) images measurement points (P) on the measurement target (3) to measure position coordinates of the measurement points (P).

Abstract: An object is to shorten time required for visual inspection. A visual inspection device (1) configured to inspect an appearance of an inspection object (30), the visual inspection device (1) including: an imager (3) configured to image the inspection object (30) arranged at a predetermined position of the visual inspection device (1); and a height measurer (11, 12) configured to measure a height of the inspection object (30) carried into the visual inspection device (1) or carried out from the visual inspection device (1).

Abstract: A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, first electrodes, a second electrode, and a gate pad portion configured by a gate electrode pad and a connecting portion. The second semiconductor layer includes a first region facing the connecting portion and a second region facing a corner portion of the gate electrode pad, and the first and second regions are free of the second semiconductor regions. The oxide film is provided on surfaces of the second semiconductor regions and the first and second regions, and the oxide film and the gate insulating film are made of a same material.

Abstract: Provided is a technique capable of more accurately determining a solder protruding defect in an appearance inspection device that acquires an image of an inspection region of an inspection target and measures a height of a predetermined place in the inspection region with a height measurement device. The appearance inspection device includes: an imaging unit (3); a height measurement unit (20); a moving mechanism (5) that moves the imaging unit (3) and the height measurement unit (20). When a restricted region (M) in the inspection target is irradiated with the measurement light emitted from the height measurement unit (20), the determination unit restricts defect determination based on the information on the height of the predetermined place measured by the height measurement unit (20).

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first electrode, and a second electrode. When a current flows from the first electrode to the second electrode, a peak light emission intensity at a wavelength close to 390 nm is lower than a peak light emission intensity at a wavelength close to 500 nm.