Abstract: In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.

Abstract: In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.

Abstract: An oxide film forming equipment is provided with a reactor 10 in which a heater unit 14 holding a substrate 100 is stored, a piping 11 provided with a material gas introducing valve V1 for introducing a material gas containing organic silicon or organic metal into the reactor, a piping 12 provided with an ozone containing gas introducing valve V2 for introducing an ozone containing gas into the reactor 10, and a piping 13 provided with an exhaustion valve 13 for exhausting a gas in the reactor 10. When the material gas introducing valve V1, the ozone containing gas introducing valve V2, and the exhaustion valve V3 perform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor 10, the ozone containing gas introducing valve V2 operates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400° C.

Abstract: An oxide film forming equipment is provided with a reactor 10 in which a heater unit 14 holding a substrate 100 is stored, a piping 11 provided with a material gas introducing valve V1 for introducing a material gas containing organic silicon or organic metal into the reactor, a piping 12 provided with an ozone containing gas introducing valve V2 for introducing an ozone containing gas into the reactor 10, and a piping 13 provided with an exhaustion valve 13 for exhausting a gas in the reactor 10. When the material gas introducing valve V1, the ozone containing gas introducing valve V2, and the exhaustion valve V3 perform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor 10, the ozone containing gas introducing valve V2 operates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400° C.

Abstract: When exposing a sample to be oxidized 10 to ozone gas so as to form an oxide film on the surface of the sample, an area to be oxidized is heated locally. Local heating is carried out with a light source 23 for irradiating infrared light the area to be oxidized of the sample on the susceptor 21, and heating means for heating the susceptor. Moreover, when exposing the sample to be oxidized to ozone gas, ozone gas is supplied to the sample while heating the sample under a given pressure. Said pressure is adjusted at 100–44,000 Pa, for example. The flow rate of ozone gas is adjusted, preferably, so that flow of ozone gas in a furnace 20 forms laminar flow. Moreover, it is desirable to provide a light source for emitting ultraviolet light. The light source for emitting ultraviolet light is arranged to irradiate the upstream side of the susceptor 21, for example.

Abstract: The present invention relates to a standard specimen for evaluating a shape of a probe of a probe microscope, which includes a multi-layer film subjected to a selective etching and a line width and a line space defined by a thickness of the layer and a line height defined by an etching amount; and a method for evaluating a probe shape of a probe microscope using the standard specimen.

Abstract: In storing a silicon substrate having a silicon oxide film formed thereon, the present invention provides a means for preventing changes in the silicon oxide film thickness. The present invention relates to a method for storing a silicon substrate having a silicon oxide film formed thereon by immersing the substrate in an aqueous medium contained in a case.

Abstract: A multi-nuclear metal molecular beam apparatus, wherein an ion beam is generated by using a multi-nuclear metal molecule.

Abstract: When exposing a sample to be oxidized 10 to ozone gas so as to form an oxide film on the surface of the sample, an area to be oxidized is heated locally. Local heating is carried out with a light source 23 for irradiating infrared light the area to be oxidized of the sample on the susceptor 21, and heating means for heating the susceptor. Moreover, when exposing the sample to be oxidized to ozone gas, ozone gas is supplied to the sample while heating the sample under a given pressure. Said pressure is adjusted at 100-44,000 Pa, for example. The flow rate of ozone gas is adjusted, preferably, so that flow of ozone gas in a furnace 20 forms laminar flow. Moreover, it is desirable to provide a light source for emitting ultraviolet light. The light source for emitting ultraviolet light is arranged to irradiate the upstream side of the susceptor 21, for example.

Abstract: An ozone beam generation apparatus includes an ozonizer for forming an ozone-containing gas through the ozonization of an oxygen-containing gas; a refrigerator for liquefying or solidifying only ozone present in the ozone-containing gas; a vessel for storing the liquefied or solidified ozone; a temperature controller for contorting the temperature of the storing vessel and for gasifying the liquefied or solidified ozone; and a piping system for transporting-the gasified ozone to a desired device. The apparatus makes it possible to steadily and safely supply pure ozone to an apparatus for oxidation treatment.

Abstract: Charged particles are generated and are subjected to a spatial distribution. Images of the distributed charged particles are formed on a screen and are processed to count the number of the charged particles.