Abstract: It is an object of the present invention to provide an organic light-emitting display of high light-emitting efficiency. The organic light-emitting element comprising a board, upper electrode, lower electrode, a plurality of light-emitting units placed between the upper and lower electrodes, and a charge-generating layer placed between a plurality of the light-emitting units, wherein one of the light-emitting units has a layer for emitting monochromatic light and one of the light-emitting units has a layer for emitting polychromatic light, the former unit having an equivalent or lower light-emitting efficiency than the latter unit.

Abstract: An active matrix type display includes a light emission device having a transparent pixel electrode and a metal pixel electrode on both surfaces of a light emitting layer and a driving circuit controlling the driving current of the light emission device. The driving circuit is formed on a substrate, and the light emission device is formed as a layer above the driving circuit with an intermediate layer of insulation material interposed therebetween. The metal pixel electrode device is connected with the driving circuit through a conduction portion which extends through the intermediate layer. Thus, light emitted from the light emission device can be prevented from reaching transistors by locating the transistors below the metal pixel electrode, and leakage current produced by the light of a transistor in the off state can be suppressed to prevent degradation of the image quality.

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: A scanning line, a signal line, a first current supply line, and a second current supply line are formed on a glass substrate, a first electrode is formed on the wiring layer comprising the above members, an organic layer comprising a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is formed on the first electrode, a second electrode is formed as cathode on the electron injection layer, the first electrode as anode is connected to a plus terminal of a power source through the driving devices and the first current supply line, whereas the second electrode as cathode is connected to a minus terminal of the power source, and is connected to the second current supply line in the display region of each pixel, with a contact hole serving as a feeding point, whereby wiring resistance due to the second electrode is reduced, and variations in the brightness of a panel is reduced.

Abstract: The pixels of a top emission display include a light emission device having a transparent pixel electrode and a metal pixel electrode on both surfaces of a light emitting layer and a driving circuit controlling the driving current of the light emission device. The driving circuit is formed on a substrate, and the light emission device is formed as a layer above the driving circuit with an intermediate layer of insulation material interposed therebetween. The transparent pixel electrode is situated opposite to the substrate. The metal pixel electrode device is connected with the driving circuit through a conduction portion which extends through the intermediate layer. Thus, light emitted from the light emission device can be prevented from reaching transistors by locating the transistors below the metal pixel electrode, and leakage current produced by the light of a transistor in the off state can be suppressed to prevent degradation of the image quality.

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: A scanning line, signal line, first current supply line, and second current supply line are formed on a glass substrate. A first electrode is formed thereon; and, an organic layer, including a hole transport layer, light-emitting layer, electron transport layer, and electron injection layer is formed on the first electrode. A second electrode is formed as a cathode on the electron injection layer. The first electrode, serving as an anode, is connected to a plus terminal of a power source through driving devices and first current supply line, whereas the second electrode is connected to a minus terminal of the power source and is connected to the second current supply line in the display region of each pixel, with a contact hole serving as a feeding point, whereby the wiring resistance of the second electrode is reduced, and variations in the brightness of the panel is reduced.

Abstract: Light-emitting devices and light-emitting displays for realizing bright display by allowing light emitted from an emissive layer to efficiently contribute to a display. Polarization separators are arranged between the emissive layer and a phase plate. In the light of a wavelength range which includes a part or all of a light-emission wavelength range of the emissive layer and is narrower than a visible wavelength range and is directed from the emissive layer side to the polarization separators side, the polarization separators reflect circularly polarized light components which are converted into linearly polarized light that is absorbed by the polarizer due to the operation of the phase plate and transmit the other light.

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: A scanning line, a signal line, a first current supply line, and a second current supply line are formed on a glass substrate, a first electrode is formed on the wiring layer comprising the above members, an organic layer comprising a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is formed on the first electrode, a second electrode is formed as cathode on the electron injection layer, the first electrode as anode is connected to a plus terminal of a power source through the driving devices and the first current supply line, whereas the second electrode as cathode is connected to a minus terminal of the power source, and is connected to the second current supply line in the display region of each pixel, with a contact hole serving as a feeding point, whereby wiring resistance due to the second electrode is reduced, and variations in the brightness of a panel is reduced.

Abstract: An actual concrete pixel structure of a top emission type display comprises a plurality of pixels arranged in a matrix on a substrate. Each of the pixels includes a light emission device prepared by forming a transparent pixel electrode and a metal pixel electrode on both surfaces of a light emitting layer and a driving circuits for controlling the driving current of the light emission device. The driving circuit is formed on the substrate, and the light emission device is formed in a layer manner above the driving circuit with an intermediate layer made of an insulation material interposed therebetween. The transparent pixel electrode is situated on the side opposite to the substrate. The metal pixel electrode of the light emission device is connected with the driving circuit through a conduction portion which extends through the intermediate layer.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: An organic light-emitting element having at least a first electrode, an organic layer, a second electrode and a passivation layer, all formed on a substrate; wherein a distance d from a light-emitting area in the organic layer to an air layer into which produced light is emitted satisfies an equation d≦&lgr;/4 (&lgr;: center wavelength of emitted light).

Abstract: Light-emitting devices and light-emitting displays for realizing bright display by allowing light emitted from an emissive layer to efficiently contribute to a display. Polarization separators are arranged between the emissive layer and a phase plate. In the light of a wavelength range which includes a part or all of a light-emission wavelength range of the emissive layer and is narrower than a visible wavelength range and is directed from the emissive layer side to the polarization separators side, the polarization separators reflect circularly polarized light components which are converted into linearly polarized light that is absorbed by the polarizer due to the operation of the phase plate and transmit the other light.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: In an organic/inorganic composite superlattice type optical modulator capable of entering/projecting light, and capable of modulating an optical characteristic such as transmittance, reflectivity, and a refractive index of light in response to an externally controlled electric field, or light, the organic/inorganic composite superlattice type optical modulator includes at least one type of a compound semiconductor layer and at least one type of an organic compound layer; the compound semiconductor layer and the organic compound layer are alternately stacked in greater than one period; at least one of the compound semiconductor layer and the organic compound layer being crystalline; and also a thickness of each of the layers is made larger than a Bohr radius of the compound semiconductor and smaller than 10 times the Bohr radius. As a result, this novel optical modulator can provide a high nonlinear characteristic by a semiconductor modulator, and a high response characteristic by an organic modulator.

Abstract: An optical memory device having at least two nonlinear optical media connected together by at least two light paths. This optical memory device can make high-speed light pulse signal processing which cannot be realized by the conventional electric switch.

Abstract: The data words in a list are grouped into n groups. The grouping is performed by selecting the first code word of the list and every nth code word thereafter to form a first group, and then by selecting the next code word of the list and every nth code word thereafter to form a second group and repeating this selection process until n groups are formed. The maximum/minimum among the data words of each of the n groups is determined, and a data word number of the maximum/minimum is ascertained. Subsequently, an absolute data word number of the maximum/minimum of each of said n groups is determined using the data word number obtained and the group number and n. Finally, the absolute code word is determined by ascertaining the maximum/minimum in the list by comparing the n maximums/minimums of the n groups.