Patents by Inventor Shingo Kanamitsu

Shingo Kanamitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11796910
    Abstract: A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: October 24, 2023
    Assignee: Kioxia Corporation
    Inventors: Kosuke Takai, Shingo Kanamitsu, Noriko Sakurai
  • Patent number: 11762286
    Abstract: A template manufacturing method includes preparing a structure including a first substrate and a stacked body that is provided on the first substrate, the stacked body including a first lower layer including a first material, a first upper layer provided on the first lower layer including a second material different from the first material, and a first cover layer provided on a first cover region of the first upper layer and including a third material different from the second material. The method further includes forming a first resist layer on a portion of the first cover layer and on a first portion of the first upper layer, and exposing a second portion of the upper layer. The method yet further includes removing the second portion of the first upper layer using the first cover layer and the first resist layer as a mask.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: September 19, 2023
    Assignee: KIOXIA CORPORATION
    Inventor: Shingo Kanamitsu
  • Publication number: 20220299870
    Abstract: A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.
    Type: Application
    Filed: September 3, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Kosuke TAKAI, Shingo KANAMITSU, Noriko SAKURAI
  • Publication number: 20220187704
    Abstract: A template manufacturing method includes preparing a structure including a first substrate and a stacked body that is provided on the first substrate, the stacked body including a first lower layer including a first material, a first upper layer provided on the first lower layer including a second material different from the first material, and a first cover layer provided on a first cover region of the first upper layer and including a third material different from the second material. The method further includes forming a first resist layer on a portion of the first cover layer and on a first portion of the first upper layer, and exposing a second portion of the upper layer. The method yet further includes removing the second portion of the first upper layer using the first cover layer and the first resist layer as a mask.
    Type: Application
    Filed: March 7, 2022
    Publication date: June 16, 2022
    Applicant: KIOXIA CORPORATION
    Inventor: Shingo Kanamitsu
  • Patent number: 11294276
    Abstract: A template manufacturing method includes preparing a structure including a first substrate and a stacked body that is provided on the first substrate, the stacked body including a first lower layer including a first material, a first upper layer provided on the first lower layer including a second material different from the first material, and a first cover layer provided on a first cover region of the first upper layer and including a third material different from the second material. The method further includes forming a first resist layer on a portion of the first cover layer and on a first portion of the first upper layer, and exposing a second portion of the upper layer. The method yet further includes removing the second portion of the first upper layer using the first cover layer and the first resist layer as a mask.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: April 5, 2022
    Assignee: KIOXIA CORPORATION
    Inventor: Shingo Kanamitsu
  • Patent number: 11061324
    Abstract: A method of manufacturing a replica template includes preparing a substrate including a first protruding portion protruding from a first surface of the substrate and having a patterning surface thereon, forming a first mask pattern over the patterning surface, the first mask pattern comprising a convex portion having a smaller width than the patterning surface and a pattern disposed on the convex portion, removing a portion of the first protruding portion using the first mask pattern as a mask to produce a second protruding portion on the first protruding portion, and forming a pattern in the patterning surface on the second protruding portion by transferring the shape of the pattern of the first mask pattern into the patterning surface on the second protruding portion.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: July 13, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Mana Tanabe, Shingo Kanamitsu
  • Publication number: 20200249567
    Abstract: According to one embodiment, an original plate such as an imprint template or the like, comprises a substrate having a first surface. A pattern region is on the first surface. An impurity layer is within the substrate in a plane parallel to the first surface. The pattern region is within an outer perimeter of the impurity layer when viewed from a direction orthogonal to the first surface.
    Type: Application
    Filed: August 26, 2019
    Publication date: August 6, 2020
    Inventors: Kazuya FUKUHARA, Shingo KANAMITSU
  • Patent number: 10459355
    Abstract: A template substrate according to an embodiment includes a first face and a second face on an opposite side to the first face. A first region is located on the first face to be protruded from a peripheral portion thereof. A second region is located at least at an end portion of the first region, and is a region in which an alignment mark used at a time of transfer of a pattern is intended to be formed. The second region contains a first impurity and a second impurity.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 29, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Shingo Kanamitsu, Sr., Masamitsu Ito
  • Publication number: 20190278167
    Abstract: A method of manufacturing a replica template includes preparing a substrate including a first protruding portion protruding from a first surface of the substrate and having a patterning surface thereon, forming a first mask pattern over the patterning surface, the first mask pattern comprising a convex portion having a smaller width than the patterning surface and a pattern disposed on the convex portion, removing a portion of the first protruding portion using the first mask pattern as a mask to produce a second protruding portion on the first protruding portion, and forming a pattern in the patterning surface on the second protruding portion by transferring the shape of the pattern of the first mask pattern into the patterning surface on the second protruding portion.
    Type: Application
    Filed: August 21, 2018
    Publication date: September 12, 2019
    Inventors: Mana TANABE, Shingo KANAMITSU
  • Patent number: 10274821
    Abstract: A mask includes a plurality of line patterns provided on a substrate, the plurality of line patterns each including a line comprising a plurality of first layers and a plurality of second layers alternately stacked on the substrate. The lines of the plurality of line patterns extend in a first direction and the lines of the plurality of line patterns are spaced in a second direction crossing the first direction. A line of one of the plurality of line patterns has a first portion and a second portion on a side of the first portion in the first direction, the first portion wider than the second portion in the second direction.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: April 30, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Keiko Morishita, Shingo Kanamitsu
  • Patent number: 10241394
    Abstract: In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: March 26, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Keiko Morishita, Shingo Kanamitsu, Hideaki Sakurai
  • Publication number: 20180267401
    Abstract: A template manufacturing method includes preparing a structure including a first substrate and a stacked body that is provided on the first substrate, the stacked body including a first lower layer including a first material, a first upper layer provided on the first lower layer including a second material different from the first material, and a first cover layer provided on a first cover region of the first upper layer and including a third material different from the second material. The method further includes forming a first resist layer on a portion of the first cover layer and on a first portion of the first upper layer, and exposing a second portion of the upper layer. The method yet further includes removing the second portion of the first upper layer using the first cover layer and the first resist layer as a mask.
    Type: Application
    Filed: September 5, 2017
    Publication date: September 20, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventor: Shingo KANAMITSU
  • Publication number: 20170269471
    Abstract: A mask includes a plurality of line patterns provided on a substrate, the plurality of line patterns each including a line comprising a plurality of first layers and a plurality of second layers alternately stacked on the substrate. The lines of the plurality of line patterns extend in a first direction and the lines of the plurality of line patterns are spaced in a second direction crossing the first direction. A line of one of the plurality of line patterns has a first portion and a second portion on a side of the first portion in the first direction, the first portion wider than the second portion in the second direction.
    Type: Application
    Filed: March 3, 2017
    Publication date: September 21, 2017
    Inventors: Keiko MORISHITA, Shingo KANAMITSU
  • Publication number: 20170115581
    Abstract: A template substrate according to an embodiment includes a first face and a second face on an opposite side to the first face. A first region is located on the first face to be protruded from a peripheral portion thereof. A second region is located at least at an end portion of the first region, and is a region in which an alignment mark used at a time of transfer of a pattern is intended to be formed. The second region contains a first impurity and a second impurity.
    Type: Application
    Filed: September 13, 2016
    Publication date: April 27, 2017
    Inventors: Shingo KANAMITSU, Masamitsu ITO
  • Publication number: 20160259240
    Abstract: In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.
    Type: Application
    Filed: September 8, 2015
    Publication date: September 8, 2016
    Inventors: Keiko MORISHITA, Shingo KANAMITSU, Hideaki SAKURAI
  • Patent number: 9412592
    Abstract: According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: August 9, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamitsu Itoh, Shingo Kanamitsu
  • Patent number: 9383641
    Abstract: According to one embodiment, in a method of repairing a defect on a template substrate for imprint lithography using a charged particle beam, a drift correction mark to correct drift of the charged particle beam is formed on the template substrate. The defect on the template substrate is repaired while correcting the drift of the charged particle beam with reference to the drift correction mark. The drift correction mark is removed.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: July 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Shingo Kanamitsu
  • Patent number: 9377682
    Abstract: According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: June 28, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shingo Kanamitsu, Masamitsu Itoh
  • Publication number: 20150258226
    Abstract: The substrate storing case includes a base being made of quartz glass, and having a supporting part that is formed on an upper surface thereof and supports a substrate. The substrate storing case includes a top cover being made of quartz glass, and being in contact with the base to cover the substrate on the upper surface of the base. The substrate includes a first absorptive member that absorbs infrared rays and generates heat. The base or the top cover has an intake port that is in communication with a space enclosed by the upper surface of the base and the top cover and is capable of being opened and closed, and an outlet port that is in communication with the space and is capable of being opened and closed.
    Type: Application
    Filed: September 8, 2014
    Publication date: September 17, 2015
    Inventors: Yukio Oppata, Hideaki Sakurai, Shingo Kanamitsu, Tomohiro Tsutsui, Kazuki Hagihara
  • Publication number: 20150092045
    Abstract: According to one embodiment, a surface state evaluation apparatus includes an imaging unit and a processing unit. The imaging unit is configured to image a first region and a second region of a surface of a sample. A plurality of liquid droplets are provided in the first region, and a plurality of liquid droplets are provided in the second region. The processing unit is configured to evaluate a state of the surface based on a result of comparing a first image of the first region imaged by the imaging unit and a second image of the second region imaged by the imaging unit.
    Type: Application
    Filed: February 27, 2014
    Publication date: April 2, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shingo KANAMITSU, Hideaki SAKURAI