Abstract: A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer including an n-type nitride semiconductor layer; a p-side semiconductor layer including a p-type nitride semiconductor layer; and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor, the active layer including a well layer made of a nitride semiconductor. The p-side semiconductor layer includes, in order from an active layer side, a first layer including Ga, Al, In, and N, a second layer containing Ga, Al, and N, and a third layer including Ga and N, the second layer being thinner than the first layer. A bandgap energy of the second layer is larger than a bandgap energy of the well layer. A p-type impurity concentration of the third layer is higher than a p-type impurity concentration of the first layer. A composition ratio of Al in the second layer is higher than a composition ratio of Al in the first layer.

Abstract: A method of modifying liquid crystal polymers, which involves a step of irradiating a liquid crystal polymer with the laser beam having a pulse width of 10?12 seconds or less. Using the invention method, the physical strength of the liquid crystal polymers can be improved as compared with the conventional liquid crystal polymers.

Abstract: A method of modifying liquid crystal polymers, which involves a step of irradiating a liquid crystal polymer with the laser beam having a pulse width of 10?12 seconds or less. Using the invention method, the physical strength of the liquid crystal polymers can be improved as compared with the conventional liquid crystal polymers.