Abstract: A semiconductor device includes: a semiconductor element having main electrodes on opposite faces in a plate thickness direction; a substrate having an insulating base member, a front-face metal body disposed on a front face of the insulating base member and electrically connected to one of the main electrodes of the semiconductor element, and a back-face metal body disposed on a back face of the insulating base member; a bonding member; and a metal member connected to the front-face metal body through the bonding member. The metal member has an opposing face opposing an upper face of the front-face metal body and a receiving portion disposed adjacent to the opposing face to provide a receiving space to receive the bonding member therein. The bonding member is received in the receiving space in a state where the opposing face is in contact with the upper face of the front-face metal body.

Abstract: A display device and a driving method are disclosed. The display device includes a plurality of pixel areas disposed in a display panel. Each pixel area includes at least one row of pixel units. The display panel further includes a plurality of collecting modules, a comparing module, and a processing module. Each collecting module is connected to the pixel units in each pixel area and configured to obtain and transmit input power voltage signals of the pixel units in a corresponding pixel area to the comparing module. The comparing module receives and compares the input power voltage signals with a base voltage respectively and transmits comparison results to the processing module respectively. The processing module adjusts data voltages of the pixel units in the corresponding pixel area respectively based on the comparison results in order to compensate the pixel units in the corresponding pixel area for resistive voltage drop differences.

Abstract: A display device and a driving method are disclosed. The display device includes a plurality of pixel areas disposed in a display panel. Each pixel area includes at least one row of pixel units. The display panel further includes a plurality of collecting modules, a comparing module, and a processing module. Each collecting module is connected to the pixel units in each pixel area and configured to obtain and transmit input power voltage signals of the pixel units in a corresponding pixel area to the comparing module. The comparing module receives and compares the input power voltage signals with a base voltage respectively and transmits comparison results to the processing module respectively. The processing module adjusts data voltages of the pixel units in the corresponding pixel area respectively based on the comparison results in order to compensate the pixel units in the corresponding pixel area for resistive voltage drop differences.

Abstract: An array substrate and a display panel are provided. The array substrate includes an enable signal input terminal, a preset electric potential input terminal, and a connection resistor. The enable signal input terminal is for inputting an enable signal. The preset electric potential input terminal is for inputting a preset electric potential. The connection resistor is connected to the enable signal input terminal and the preset electric potential input terminal, and a resistance value of the connection resistor is a predetermined multiple of a resistance value of the enable signal input terminal. In the present disclosure, the enable signal can be input through the preset electric potential input terminal.

Abstract: The invention provides an AMOLED pixel driving circuit, driving method and terminal. The AMOLED pixel driving circuit adopts a 6T1C structure, comprising a first TFT, i.e., driving TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a storage capacitor and an OLED; the scan signal, the first light-emitting control signal and the second light-emitting control signal are combined to successively correspond to a reset phase, a compensation phase and a light-emitting phase, so that the driving current flowing through the OLED is independent of the threshold voltage of the driving TFT and the positive power voltage. The invention compensates for the threshold voltage drift of the driving TFT and also for the voltage drop in positive power voltage.

Abstract: The invention provides an AMOLED pixel driving circuit, driving method and terminal. The AMOLED pixel driving circuit adopts a 6T1C structure, comprising a first TFT, i.e., driving TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a storage capacitor and an OLED; the scan signal, the first light-emitting control signal and the second light-emitting control signal are combined to successively correspond to a reset phase, a compensation phase and a light-emitting phase, so that the driving current flowing through the OLED is independent of the threshold voltage of the driving TFT and the positive power voltage. The invention compensates for the threshold voltage drift of the driving TFT and also for the voltage drop in positive power voltage.

Abstract: An array substrate and a display panel are provided. The array substrate includes an enable signal input terminal, a preset electric potential input terminal, and a connection resistor. The enable signal input terminal is for inputting an enable signal. The preset electric potential input terminal is for inputting a preset electric potential. The connection resistor is connected to the enable signal input terminal and the preset electric potential input terminal, and a resistance value of the connection resistor is a predetermined multiple of a resistance value of the enable signal input terminal. In the present disclosure, the enable signal can be input through the preset electric potential input terminal.

Abstract: The present disclosure provides a driving circuit and a liquid crystal display panel, including an input module, a first control module, a second control module, a third control module, an output module and a reset module, which can simplify structure of the driving circuit while ensuring the liquid crystal display panel works well.

Abstract: A semiconductor device (100A) is provided with: a gate electrode (3); an oxide semiconductor layer (5); a thin-film transistor (101) including a gate insulating layer (4), a source electrode (7S), and a drain electrode (7D); an inter-layer insulating layer (11) arranged so as to cover the thin-film transistor (101) and come into contact with a channel area (5c) of the thin-film transistor (101); and a transparent electroconductive layer (19) arranged on the inter-layer insulating layer (11), the source electrode (7S) and the drain electrode (7D) each having a copper layer (7a), and the device being further provided with a copper oxide film (8) arranged between the source and drain electrodes and the inter-layer insulating layer (11). The inter-layer insulating layer (11) covers the drain electrode (7D) with the copper oxide film (8) interposed therebetween.

Abstract: A semiconductor device includes a substrate and a thin film transistor supported by the substrate. The thin film transistor includes a gate electrode, an oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, and source and drain electrodes electrically connected to the oxide semiconductor layer. The gate insulating layer includes a first portion which is covered with the oxide semiconductor layer and a second portion which is adjacent to the first portion and which is not covered with any of the oxide semiconductor layer, the source electrode and the drain electrode. The second portion is smaller in thickness than the first portion, and the difference in thickness between the second portion and the first portion is more than 0 nm and not more than 50 nm.

Abstract: The present disclosure provides a driving circuit and a liquid crystal display panel, including an input module, a first control module, a second control module, a third control module, an output module and a reset module, which can simplify structure of the driving circuit while ensuring the liquid crystal display panel works well.

Abstract: A semiconductor device (100) is provided with a thin film transistor including an oxide semiconductor layer (5), a gate electrode (3), a gate insulating layer (4), and a source electrode (7s) and a drain electrode (7d) that are in contact with the oxide semiconductor layer, at least one electrode of the source electrode (7s), the drain electrode (7d), and the gate electrode (3) has a multilayer structure that includes a first layer (3A, 7A) containing copper and a second layer (3B, 7B) containing titanium or molybdenum, the thickness of the first layer (3A, 7A) is more than the thickness of the second layer (3B, 7B), when the source electrode (7s) or the drain electrode (7d) has the multilayer structure, the second layer is arranged on the oxide semiconductor layer side of the first layer so as to be in contact with the surface of the oxide semiconductor layer (5), when the gate electrode (3) has the multilayer structure, the second layer is arranged on the substrate (1) side of the first layer, and the thick

Abstract: An active matrix organic light-emitting diode (AMOLED) display device and a controlling method thereof. The AMOLED display device (100) comprises a system power IC (110), a driver IC (120), an AMOLED panel (130), a power line (111) and a feedback line (112). The AMOLED panel (130) includes a plurality of pixel circuits. The system power IC (110) outputs a positive power supply voltage (ELVdd1) to the plurality of pixel circuits via the power line (111), and the driver IC (120) detects a positive power supply voltage (ELVdd2) actually applied to the plurality of pixel circuits via the feedback line (112) and compensates for data voltages (Vdata) based on the positive power supply voltage (ELVdd2) actually applied to plurality of pixel circuits.

Abstract: A semiconductor device (100A) is provided with: a gate electrode (3); an oxide semiconductor layer (5); a thin-film transistor (101) including a gate insulating layer (4), a source electrode (7S), and a drain electrode (7D); an inter-layer insulating layer (11) arranged so as to cover the thin-film transistor (101) and come into contact with a channel area (5c) of the thin-film transistor (101); and a transparent electroconductive layer (19) arranged on the inter-layer insulating layer (11), the source electrode (7S) and the drain electrode (7D) each having a copper layer (7a), and the device being further provided with a copper oxide film (8) arranged between the source and drain electrodes and the inter-layer insulating layer (11). The inter-layer insulating layer (11) covers the drain electrode (7D) with the copper oxide film (8) interposed therebetween.

Abstract: A semiconductor device (100A) includes a substrate (101) and a thin film transistor (10) supported by the substrate. The thin film transistor includes a gate electrode (102), an oxide semiconductor layer (104), a gate insulating layer (103), a source electrode (105) and a drain electrode (106). The oxide semiconductor layer includes an upper semiconductor layer (104b) which is in contact with the source electrode and the drain electrode and which has a first energy gap, and a lower semiconductor layer (104a) which is provided under the upper semiconductor layer and which has a second energy gap that is smaller than the first energy gap. The source electrode and the drain electrode include a lower layer electrode (105a, 106a) which is in contact with the oxide semiconductor layer and which does not contain Cu, and a major layer electrode (105b, 106b) which is provided over the lower layer electrode and which contains Cu.

Abstract: A semiconductor device (100) includes: a substrate (10); and a thin film transistor (5) supported on the substrate, the thin film transistor including a gate electrode (12), an oxide semiconductor layer (18), a gate insulating layer (20) provided between the gate electrode and the oxide semiconductor layer, and a source electrode (14) and a drain electrode (16) electrically connected to the oxide semiconductor layer, wherein: the drain electrode is shaped so as to project toward the oxide semiconductor layer; a width W1 and a width W2 satisfy a relationship |W1?W2|?1 ?m, where the width W1 is a width of the oxide semiconductor layer in a channel width direction of the thin film transistor, and the width W2 is a width of the drain electrode in a direction perpendicular to a direction in which the drain electrode projects; and the width W1 and the width W2 are 3 ?m or more and 6 ?m or less.

Abstract: A semiconductor device (100A) includes: a substrate (1); a thin film transistor (101) whose active layer is an oxide semiconductor layer 5; at least one metal wiring layer including copper (7S, 7D); a metal oxide film including copper (8) arranged on an upper surface of the at least one metal wiring layer (7S, 7D); an insulating layer (11) covering at least one metal wiring layer with the metal oxide film (8) interposed therebetween; and a conductive layer (19) in direct contact with a portion of the at least one metal wiring layer, without the metal oxide film (8) interposed therebetween, in an opening formed in the insulating layer (11).

Abstract: A gamma voltage adjusting circuit and method for a driver IC, as well as an AMOLED display device are disclosed. The gamma voltage adjusting circuit for the driver IC includes an ADC unit, a logic determination unit, a voltage adjustment unit and a gamma generation unit. In the AMOLED display device, the driver IC is connected to an ELVDD power supply cable so that an ELVDD power supply voltage is input to the driver IC. The ADC unit converts the voltage signal to a digital signal, and the logic determination unit determines a change in the ELVDD power supply voltage based on the digital signal and generates an adjusting signal. The voltage adjustment unit generates a corresponding adjusting voltage, and the gamma generation unit adjusts a gamma voltage. In this way, variations in brightness of the display device or display quality inconsistencies between different areas thereof caused by changes in the ELVDD power supply voltage can be avoided, and an improvement in display quality can be obtained.

Abstract: A semiconductor device (100) is provided with a thin film transistor including an oxide semiconductor layer (5), a gate electrode (3), a gate insulating layer (4), and a source electrode (7s) and a drain electrode (7d) that are in contact with the oxide semiconductor layer, at least one electrode of the source electrode (7s), the drain electrode (7d), and the gate electrode (3) has a multilayer structure that includes a first layer (3A, 7A) containing copper and a second layer (3B, 7B) containing titanium or molybdenum, the thickness of the first layer (3A, 7A) is more than the thickness of the second layer (3B, 7B), when the source electrode (7s) or the drain electrode (7d) has the multilayer structure, the second layer is arranged on the oxide semiconductor layer side of the first layer so as to be in contact with the surface of the oxide semiconductor layer (5), when the gate electrode (3) has the multilayer structure, the second layer is arranged on the substrate (1) side of the first layer, and the thick

Abstract: An active matrix organic light-emitting diode (AMOLED) display device and a controlling method thereof. The AMOLED display device (100) comprises a system power IC (110), a driver IC (120), an AMOLED panel (130), a power line (111) and a feedback line (112). The AMOLED panel (130) includes a plurality of pixel circuits. The system power IC (110) outputs a positive power supply voltage (ELVdd1) to the plurality of pixel circuits via the power line (111), and the driver IC (120) detects a positive power supply voltage (ELVdd2) actually applied to the plurality of pixel circuits via the feedback line (112) and compensates for data voltages (Vdata) based on the positive power supply voltage (ELVdd2) actually applied to plurality of pixel circuits.