Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second sub-pixel that is disposed to be adjacent to the first sub-pixel in the first direction, a third sub-pixel that is disposed to be adjacent to at least one of the first sub-pixel and the second sub-pixel in the second direction, and a light shielding portion that is disposed corresponding to the position on which the third sub-pixel is disposed, so as to limit a viewing angle of the third sub-pixel in the first direction.

Abstract: A communication control device 100 initiates a session with a communication device by executing a sequence including a plurality of communication events.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors.

Abstract: To give an electric shield function and an electric contact function to a light shielding film formed on a drive substrate.An active matrix display device includes a drive substrate 1 having pixels 4, an opposed substrate 2 having an opposed electrode 5, and a liquid crystal 3 held in a space defined between the drive substrate 1 and the opposed substrate 2. An upper layer portion of the drive substrate 1 includes pixel electrodes 6 formed individually for the pixels 4. A lower layer portion of the drive substrate 1 includes thin-film transistors 7 for individually driving the pixel electrodes 6, scanning lines 8, and signal lines 9. A light shielding film having conductivity is interposed between the upper layer portion and the lower layer portion, and is divided into mask shielding films 16M and pad shielding films 16P. Each mask shielding film 16M is continuously patterned along each row of the pixels 4 to partially shield at least the corresponding thin-film transistor 7.