Patents by Inventor Shingo Masuko
Shingo Masuko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10784165Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.Type: GrantFiled: March 12, 2018Date of Patent: September 22, 2020Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Shingo Masuko, Kazuo Fujimura, Yoshiharu Takada, Ichiro Mizushima
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Publication number: 20190267288Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a semiconductor layer, and a lower layer. The semiconductor layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.Type: ApplicationFiled: March 12, 2018Publication date: August 29, 2019Inventors: Shingo Masuko, Kazuo Fujimura, Yoshiharu Takada, Ichiro Mizushima
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Patent number: 9966311Abstract: A semiconductor device manufacturing method according to an embodiment including partially forming a first groove on a nitride semiconductor layer provided on a first plane of a substrate having first and second planes by etching so that the substrate is exposed, forming a second groove on the substrate exposed inside the first groove so that a portion of the substrate remains, removing the substrate from the second plane side so that the second groove is not exposed, thinning the substrate, forming a metal film on the second plane side of the substrate, removing the metal film in a portion where the second groove is formed, and forming a third groove on the substrate in the portion where the second groove is formed so that the second groove is exposed from the second plane side.Type: GrantFiled: March 11, 2016Date of Patent: May 8, 2018Assignee: Kabushiki Kaisha ToshibaInventor: Shingo Masuko
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Patent number: 9953894Abstract: A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.Type: GrantFiled: March 1, 2017Date of Patent: April 24, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shingo Masuko, Yoshiharu Takada, Kazuo Fujimura
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Publication number: 20180082918Abstract: A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.Type: ApplicationFiled: March 1, 2017Publication date: March 22, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shingo MASUKO, Yoshiharu TAKADA, Kazuo FUJIMURA
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Publication number: 20170069535Abstract: A semiconductor device manufacturing method according to an embodiment including partially forming a first groove on a nitride semiconductor layer provided on a first plane of a substrate having first and second planes by etching so that the substrate is exposed, forming a second groove on the substrate exposed inside the first groove so that a portion of the substrate remains, removing the substrate from the second plane side so that the second groove is not exposed, thinning the substrate, forming a metal film on the second plane side of the substrate, removing the metal film in a portion where the second groove is formed, and forming a third groove on the substrate in the portion where the second groove is formed so that the second groove is exposed from the second plane side.Type: ApplicationFiled: March 11, 2016Publication date: March 9, 2017Inventor: Shingo Masuko
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Patent number: 9472467Abstract: A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate includes grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is d1, and reducing the thickness of the semiconductor substrate to one-fifth or less of d1.Type: GrantFiled: March 3, 2015Date of Patent: October 18, 2016Assignee: Kabushiki Kaisha ToshibaInventor: Shingo Masuko
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Patent number: 9412825Abstract: A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.Type: GrantFiled: August 29, 2014Date of Patent: August 9, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Takaaki Yasumoto, Naoko Yanase, Kazuhide Abe, Takeshi Uchihara, Yasunobu Saito, Toshiyuki Naka, Akira Yoshioka, Tasuku Ono, Tetsuya Ohno, Hidetoshi Fujimoto, Shingo Masuko, Masaru Furukawa, Yasunari Yagi, Miki Yumoto, Atsuko Iida, Yukako Murakami, Takako Motai
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Publication number: 20160218067Abstract: A semiconductor device includes a substrate, a nitride semiconductor layer formed on the substrate, and a protection layer, comprising carbon, covering a side surface of the nitride semiconductor layer.Type: ApplicationFiled: August 31, 2015Publication date: July 28, 2016Inventors: Shingo MASUKO, Yoshiharu TAKADA, Takashi ONIZAWA, Yasuhiro ISOBE, Kohei OASA
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Publication number: 20160211225Abstract: A semiconductor device includes a substrate, and a nitride semiconductor layer provided on the substrate. An opening is provided through the nitride semiconductor layer, and a portion of the opening extends inwardly of a side surface of the substrate and beneath the nitride semiconductor layer.Type: ApplicationFiled: August 20, 2015Publication date: July 21, 2016Inventors: Shingo MASUKO, Yoshiharu TAKADA
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Publication number: 20160079120Abstract: A semiconductor device includes a semiconductor substrate that has a first surface and a second surface opposite to the first surface, and has a groove or trench extending from the first surface toward the second surface, a bottom of the groove being situated between the first surface and the second surface, and a gallium nitride-containing layer on the first surface of the semiconductor substrate having a trench tapering inwardly along a direction toward the first surface of the semiconductor substrate and connected to the groove.Type: ApplicationFiled: March 3, 2015Publication date: March 17, 2016Inventors: Shingo MASUKO, Yoshiharu TAKADA, Yasuhiro ISOBE
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Publication number: 20160079123Abstract: A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate includes grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is d1, and reducing the thickness of the semiconductor substrate to one-fifth or less of d1.Type: ApplicationFiled: March 3, 2015Publication date: March 17, 2016Inventor: Shingo MASUKO
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Publication number: 20150263630Abstract: In one embodiment, a power supply circuit includes a first circuit including one or more first switching devices, and a first controller configured to control the first switching devices, the first circuit being configured to output a first voltage. The power supply circuit further includes a second circuit including one or more second switching devices which include a normally-on device, and a second controller configured to control the second switching devices, the second circuit being configured to output a second voltage generated from the first voltage. The second controller transmits a first signal for allowing the first circuit to output the first voltage, based on a value of a voltage or a current at a first node in the second circuit. The first controller allows the first circuit to output the first voltage by controlling the first switching devices in accordance with the first signal.Type: ApplicationFiled: September 10, 2014Publication date: September 17, 2015Inventors: Toshiyuki Naka, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Takeshi Uchihara, Takaaki Yasumoto, Naoko Yanase, Shingo Masuko, Tasuku Ono
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Publication number: 20150263700Abstract: According to one embodiment, a semiconductor device includes a GaN-based semiconductor layer, a resonator that uses a first portion of the GaN-based semiconductor layer as a piezoelectric layer to resonate, and a transistor that uses a second portion of the GaN-based semiconductor layer as a channel layer.Type: ApplicationFiled: September 2, 2014Publication date: September 17, 2015Inventors: Takaaki YASUMOTO, Naoko YANASE, Kazuhide ABE, Takeshi UCHIHARA, Yasunobu SAITO, Toshiyuki NAKA, Akira YOSHIOKA, Tasuku ONO, Tetsuya OHNO, Hidetoshi FUJIMOTO, Shingo MASUKO, Masaru FURUKAWA, Yasunari YAGI, Miki YUMOTO, Atsuko IIDA, Yukako MURAKAMI, Yoshikazu SUZUKI
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Publication number: 20150263152Abstract: A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.Type: ApplicationFiled: August 29, 2014Publication date: September 17, 2015Inventors: Takaaki YASUMOTO, Naoko YANASE, Kazuhide ABE, Takeshi UCHIHARA, Yasunobu SAITO, Toshiyuki NAKA, Akira YOSHIOKA, Tasuku ONO, Tetsuya OHNO, Hidetoshi FUJIMOTO, Shingo MASUKO, Masaru FURUKAWA, Yasunari YAGI, Miki YUMOTO, Atsuko IIDA, Yukako MURAKAMI, Takako MOTAI
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Publication number: 20150263101Abstract: In one embodiment, a semiconductor device includes a semiconductor chip including a nitride semiconductor layer, and including a control electrode, a first electrode and a second electrode provided on the nitride semiconductor layer. The device further includes a support including a substrate, and including a control terminal, a first terminal and a second terminal provided on the substrate. The semiconductor chip is provided on the support such that the control electrode, the first electrode and the second electrode face the support. The control electrode, the first electrode and the second electrode of the semiconductor chip are electrically connected to the control terminal, the first terminal and the second terminal of the support, respectively.Type: ApplicationFiled: September 10, 2014Publication date: September 17, 2015Inventors: Shingo Masuko, Takaaki Yasumoto, Naoko Yanase, Miki Yumoto, Masahito Mimura, Yasunobu Saito, Akira Yoshioka, Hidetoshi Fujimoto, Takeshi Uchihara, Tetsuya Ohno, Toshiyuki Naka, Tasuku Ono
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Patent number: 9054171Abstract: In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.Type: GrantFiled: March 7, 2014Date of Patent: June 9, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuya Ohno, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Takeshi Uchihara, Toshiyuki Naka, Takaaki Yasumoto, Naoko Yanase, Shingo Masuko, Tasuku Ono
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Publication number: 20150076506Abstract: This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer.Type: ApplicationFiled: March 17, 2014Publication date: March 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Takaaki Yasumoto, Naoko Yanase, Kazuhide Abe, Takeshi Uchihara, Yasunobu Saito, Toshiyuki Naka, Akira Yoshioka, Tasuku Ono, Tetsuya Ohno, Hidetoshi Fujimoto, Shingo Masuko, Masaru Furukawa, Yasunari Yagi, Miki Yumoto, Atsuko Iida
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Publication number: 20150069468Abstract: In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.Type: ApplicationFiled: March 7, 2014Publication date: March 12, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tetsuya Ohno, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Takeshi Uchihara, Toshiyuki Naka, Takaaki Yasumoto, Naoko Yanase, Shingo Masuko, Tasuku Ono
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Patent number: 8916881Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: GrantFiled: September 10, 2013Date of Patent: December 23, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Naoko Yanase, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano